SSM9435
-6A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-223
The SSM9435 provide the designer with best
combination of fast switching, low on-resistance
and cost-effectiveness.
Features
* Simple Drive Requirement
* Fast Switching Characteristic
* Lower On-Resistance
D
Date Code
REF.
A
C
D
E
I
H
9 4 3 5
G
G
D
S
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
S
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
-30
V
VGS
±25
V
-6.0
A
ID@TA=70 C
-4..8
A
IDM
-20
A
2.7
W
0.02
W / oC
o
1,2
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 oC
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
45
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM9435
-6A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 30
_
BVDS/ Tj
_
VGS(th)
IGSS
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj= 70 C )
Static Drain-Source On-Resistance
2
IDSS
RD S (O N )
- 0.02
_
V/ C
-1.0
_
-3.0
V
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
_
100
9.2
16
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Fall Time
Input Capacitance
Output Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
Coss
50
_
_
Turn-off Delay Time
Test Condition
V
Qg
Rise Time
Unit
_
Total Gate Charge2
Turn-on Delay Time2
Max.
_
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
2.8
_
5.2
_
11
_
8
_
25
_
17
_
507
912
222
_
158
10
o
mΩ
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-10V, ID=- 5.3A
VGS=-4.5V, ID=-4.2A
nC
ID=-5.3A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10 V
RG=6 Ω
RD=15 Ω
pF
VGS=0V
VDS=-15V
S
VDS=-10V, ID=-5.3A
f=1.0MHz
_
_
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
-1.2
V
IS=-2.3 A, VGS=0V.
nS
IS=-5.3 A, VGS=0V.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
29
_
20
_
Reverse Recovery Change
Qrr
_
nC
dl/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
o
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM9435
Elektronische Bauelemente
-6A, -30V,RDS(ON) 50mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSM9435
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
-6A, -30V,RDS(ON) 50mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
12
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4