SSG4957
-7.7A, -30V,RDS(ON) 24m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG4957 provide the designer with the best Combination of fast switching,
45
ruggedized device design, ultra low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
3.80
4.00
0.100.25
1.27Typ.
0.35
0.49
4.80
5.00
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Low on-resistance
* Simple drive requirement
* Dual P MOSFET Package
Date Code
D1
D1
D2
D2
8
7
6
5
D1
D1
4957SS
G1
G1
1
2
3
4
S1
G1
S2
G2
S1
S1
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current 1
Total Power Dissipation
±20
V
o
-7.7
A
o
ID@TA=70 C
- 6.1
A
IDM
-30
A
2
W
0.016
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG4957
-7.7A, -30V,RDS(ON) 24m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
-30
_
_
BVDS/ Tj
_
-0.02
_
V/ oC
VGS(th)
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
20
24
_
30
36
Qg
_
27
45
Gate-Source Charge
Qgs
_
5
_
Gate-Drain ("Miller") Charge
Qgd
18
_
14
_
11
_
38
_
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance2
Total Gate Charge 2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
IDSS
RDS(ON)
Forward Transconductance
V
VGS=0V, ID=-250uA
mΩ
nC
Tr
_
Td(Off)
_
Tf
_
25
_
_
1670
2670
530
_
435
_
12
_
Min.
Typ.
Max.
Unit
_
_
-1.2
V
_
Crss
_
Gfs
_
o
Reference to 25 C ,ID=-1mA
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
_
Coss
Reverse Transfer Capacitance
Test Condition
Td(ON)
Ciss
Output Capacitance
_
Unit
ID=-7A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=-25V
S
VDS=-10V, ID=-7A
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Forward On Voltage 2
VDS
Reverse Recovery Time 2
Trr
Reverse Recovery Charge
Qrr
_
_
35
34
_
_
Test Condition
o
IS=1.7A, VGS=0V. Tj=25 C
A
Is=-7A, V GS=0V
A
dl/dt=100A/uS
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
2
3.Surface mounted on 1 in copper pad of FR4 board; 135 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG4957
Elektronische Bauelemente
-7.7A, -30V,RDS(ON) 24mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3of 4
SSG4957
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-7.7A, -30V,RDS(ON) 24m Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4