SSG4407
-10.7A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
The SSG4407 provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
0.19
0.25
0.40
0.90
45
o
0.375 REF
6.20
5.80
0.25
3.80
4.00
1.27 Typ.
0.35
0.49
4.80
5.00
Features
0.10 0.25
o
0
o
8
1.35
1.75
Dimensions in millimeters
* Lower On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristic
Date Code
D
D
D
D
8
7
6
5
D
4407SC
G
1
2
3
4
S
S
S
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Pulsed Drain Current
3
-30
V
VGS
±25
V
-10.7
A
ID@TA=70 C
-8.6
A
IDM
-50
A
2.5
W
0.02
W / oC
o
1
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 oC
Continuous Drain Current
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
50
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSG4407
-10.7A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 30
_
BVDS/ Tj
_
VGS(th)
IGSS
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj= 70 C )
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Max.
V
- 0.015
_
V/ C
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
_
14
_
20
29
46
_
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
_
14
_
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Td(ON)
_
Tr
_
Td(Off)
Tf
Ciss
Coss
Test Condition
_
Qg
Total Gate Charge2
Unit
15
_
_
100
_
_
70
_
2600
4100
500
_
370
_
13
_
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
mΩ
o
Reference to 25 C, ID=- 1mA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
nC
_
12
_
o
VGS=0V, ID=-250uA
ID=-10.7A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10 V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=-25V
S
VDS=-10V, ID=-10A
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
31
Reverse Recovery Change
Qrr
_
25
Max.
Unit
Test Condition
-1.2
V
IS=-10 .7A, VGS=0V.
_
nS
IS=-10.7A, VGS=0V.
_
nC
dl/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
o
3.Surface mounted on 1 in copper pad of FR4 board;125 C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG4407
-10.7A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
JunctionAnyTemperature
changing of specification will not be informed individual
Page 3 of 4
SSG4407
-10.7A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
12
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4