BVDSS = 60 V RDS(on) = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 60 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 50 A Drain Current – Continuous (TC = 100℃) 35.4 A IDM Drain Current – Pulsed 200 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25℃)* 3.75 W Power Dissipation (TC = 25℃) - Derate above 25℃ 120 W 0.8 W/℃ -55 to +175 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 1.24 Rθ JA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Nov 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A -- 0.018 0.022 Ω VGS = 0 V, ID = 250 ㎂ 60 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.06 -- V/℃ VDS = 60 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TC = 150℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 ㎁ -- 1600 2100 ㎊ -- 600 780 ㎊ -- 90 120 ㎊ -- 15 40 ㎱ -- 105 220 ㎱ -- 60 130 ㎱ -- 65 140 ㎱ -- 40 52 nC -- 10 -- nC -- 17 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 30 V, ID = 25 A, RG = 25 Ω (Note 4,5) VDS = 48 V, ID = 50 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 50 ISM Pulsed Source-Drain Diode Forward Current -- -- 200 VSD Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 52 -- ㎱ Qrr Reverse Recovery Charge IS = 50 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 75 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230μH, IAS=50A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Electrical Characteristics TC=25 °C HFW50N06_HFI50N06 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 Ciss 2000 Coss 1500 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 30V VGS, Gate-Source Voltage [V] 2500 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 48V 8 6 4 2 ※ Note : ID = 50 A 0 -1 10 0 0 10 1 10 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 50 ◎ SEMIHOW REV.A0,Mar 2009 (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFW50N06_HFI50N06 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 103 60 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 100 µs 102 1 ms 10 ms DC 101 * Notes : 1. TC = 25 oC 40 30 20 10 2. TJ = 175 oC 3. Single Pulse 100 10-1 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oc] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 Zθ JC(t), Thermal Response ID, Drain Current [A] 50 D=0.5 * Notes : 1. ZθJC(t) = 1.24 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 10-1 0.05 0.02 0.01 10-2 10-5 PDM t1 single pulse 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Package Dimension ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Package Dimension ◎ SEMIHOW REV.A0,Mar 2009