BVDSS = 500 V RDS(on) HFP4N50 typ = 2.0 Ω ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 500 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 3.4 A Drain Current – Continuous (TC = 100℃) 2.15 A IDM Drain Current – Pulsed 13.6 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 440 mJ IAR Avalanche Current (Note 1) 3.4 A EAR Repetitive Avalanche Energy (Note 1) 7.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 70 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.56 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 1.78 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,July 2005 HFP4N50 July 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.7 A -- 2.0 2.7 Ω VGS = 0 V, ID = 250 ㎂ 500 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.38 -- V/℃ VDS = 500 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 450 590 ㎊ -- 70 90 ㎊ -- 10 17 ㎊ -- 15 30 ㎱ -- 70 140 ㎱ -- 30 60 ㎱ -- 40 80 ㎱ -- 13 17 nC -- 4.0 -- nC -- 6.0 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 3.4 A, RG = 25 Ω (Note 4,5) VDS = 400 V, ID = 3.4 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 3.4 ISM Pulsed Source-Drain Diode Forward Current -- -- 13.6 VSD Source-Drain Diode Forward Voltage IS = 3.4 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 220 -- ㎱ Qrr Reverse Recovery Charge IS = 3.4 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.3 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=68mH, IAS=3.4A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤3.4A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFP4N50 Electrical Characteristics TC=25 °C HFP4N50 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics VSD, Source-Drain Voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Capacitances [pF] 700 Ciss 600 500 Coss 400 300 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 100V VGS, Gate-Source Voltage [V] 900 10 VDS = 250V VDS = 400V 8 6 4 2 100 ※ Note : ID = 3.4A 0 -1 10 0 10 1 10 0 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 14 ◎ SEMIHOW REV.A0,July 2005 HFP4N50 Typical Characteristics RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage (continued) TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 4 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms 100 DC 10-1 * Notes : 1. TC = 25 oC 10-2 100 2. TJ = 150 oC 3. Single Pulse 101 102 3 2 1 0 25 103 50 Figure 9. Maximum Safe Operating Area 100 150 * Notes : 1. ZθJC(t) = 1.78 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 0.02 0.01 PDM single pulse t1 -2 10-5 125 D=0.5 0.2 10 100 Figure 10. Maximum Drain Current vs Case Temperature 0.1 10-1 75 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] ID, Drain Current [A] 100 µs 101 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFP4N50 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,July 2005 HFP4N50 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFP4N50 Package Dimension TO-220 (A) 9.90±0.20 0. 0± .6 20 4.50±0.20 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,July 2005 HFP4N50 TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,July 2005