BVDSS = 400 V RDS(on) typ = 1.27 Ω HFS5N40 ID = 3.0 A 400V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 400 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 3.0* A Drain Current – Continuous (TC = 100℃) 1.9* A IDM Drain Current – Pulsed 12* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 510 mJ IAR Avalanche Current (Note 1) 3.0 A EAR Repetitive Avalanche Energy (Note 1) 7.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 35 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.28 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 3.57 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,June 2005 HFS5N40 June 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.5 A -- 1.27 1.6 Ω VGS = 0 V, ID = 250 ㎂ 400 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.38 -- V/℃ VDS = 400 V, VGS = 0 V -- -- 1 ㎂ VDS = 320 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 450 590 ㎊ -- 70 90 ㎊ -- 10 17 ㎊ -- 15 30 ㎱ -- 70 140 ㎱ -- 30 60 ㎱ -- 40 80 ㎱ -- 13 17 nC -- 4.0 -- nC -- 6.0 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 200 V, ID = 4.5 A, RG = 25 Ω (Note 4,5) VDS = 320 V, ID = 4.5 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 3.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 12 VSD Source-Drain Diode Forward Voltage IS = 3.0 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 190 -- ㎱ Qrr Reverse Recovery Charge IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.0 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=44mH, IAS=4.5, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,June 2005 HFS5N40 Electrical Characteristics TC=25 °C HFS5N40 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Capacitances [pF] 700 Ciss 600 500 Coss 400 300 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 80V VGS, Gate-Source Voltage [V] 900 10 VDS = 200V VDS = 320V 8 6 4 2 100 * Note : ID = 4.5A 0 -1 10 0 10 1 10 0 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 14 ◎ SEMIHOW REV.A0,June 2005 HFS5N40 Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 3.0 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 3 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms 100 DC 10-1 2 1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse -2 10 100 102 101 0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response ID, Drain Current [A] ID, Drain Current [A] 100 µs 101 100 0.2 * Notes : 1. ZθJC(t) = 3.57 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 -1 10 0.02 PDM 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,June 2005 HFS5N40 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,June 2005 HFS5N40 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,June 2005 HFS5N40 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,June 2005