KSB130 003AR KSB13003AR ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W Max Operating temperature • 150℃ Max. • 8KV ESD proof at HBM (C=100㎊, R=1.5㏀) Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TSTG TJ 700 400 9 15 1.5 3 0.75 1.10 -65~150 150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C Current(DC) rrent(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Storage Temperature Max. Operating Junction Temperature Electrical Characteristics CHARACTERISTICS 1.5 Amperes NPN Silicon Power Transistor 1.1 Watts TO-92 1. Emitter 2. Collector 3. Base 3 1 2 TC=25℃ unless otherwise noted SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage VCBO IC=500μA, IE=0 700 V Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 400 V Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=2V,IC=0.5A VCE=2V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A 0.5 1.0 3.0 V V V *Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=0.1A IC=1A,IB=0.25A 1.0 1.2 V V 10 9 5 Cob VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.1A T Turn on Time Ti ton Storage Time tstg Fall Time tF Output Capacitance ㎂ 30 ㎊ 21 ㎒ 4 Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω 11 1.1 ㎲ 4.0 ㎲ 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. hFE1 Classification Package Mark information. R 9 ~ 16 O 15 ~ 25 Y 20 ~ 30 S AR 13003 YWW Z R YWW Z Pin type (ECB) Y; year code, WW; week code hFE1 Classification ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR Typical Characteristics ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR Typical Characteristics ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR Package Dimension TOTO -92 3.71±0.2 4.58±0.25 3° 4.58±0.25 4° 14.47 7±0.5 0.46±0.1 1 27t 1.27typ 3.6±0.25 1.02±±0.1 3.71±0.225 1.27typ Dimensions in Millimeters ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR Package Dimension W W1 W0 H0 H W2 H1 TOTO -92 TAPING D0 F1 F2 P1 Item P P2 Symbol Dimension [mm] Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR 1. Document Name : KSB13003AR Data sheet 2. Revision History Product Name KSB13003AR File Name KSB13003AR_datasheet Rev. A1 A2 Revision History Owner / date Initiate specification Add SPEC of Max. operating temperature, ESD level, MSL level Jroh / 20070604 Jroh / 20070813 ◎ SEMIHOW REV.A2,Oct 2007