SPHP0365A/SPHN0365A VER : Preliminary ( SEMIHOW POWER SWITCH ) FEATURES APPLICATION Variable frequency operation SMPS for STB, SVR, DVD & DVCD Low Start-up Current(Typ.100uA ) Pulse by Pulse Current Limiting SMPS for Printer, Facsimile & Scanner Adaptor Over Current Protection Over Voltage Protection (Min. 20) Internal Thermal Shutdown Function Under Voltage Lockout SPHN0365A SPHP0365A Internal High Voltage Sense FET Auto-Restart Mode Advanced Burst-Mode Operation DESCRIPTION The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter INTERNAL BLOCK DIAGRAM ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary DEC 2009 TC=25℃ unless otherwise specified SPHP0365A Symbol Parameter Value Units 650 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 3.0 A Drain Current – Continuous (TC = 100℃) 2.4 A ±30 V 12 A ±30 V 358 mJ 20 V -0.3 To VSD V 75 W VGD Gate - source Voltage IDM Drain Current VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy VCC(MAX) Maximum Supply voltage VFB Analog Input Voltage Range PD Power Dissipation (TC = 25℃) - Derate above 25℃ 0.6 W/℃ TJ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃ – Pulsed (Note 1) (Note 2) SPHN0365A Symbol Parameter Value Units 650 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 0.42 A Drain Current – Continuous (TC = 100℃) 0.28 A ±30 V 3 A ±30 V 127 mJ 20 V -0.3 To VSD V VGD Gate - source Voltage IDM Drain Current VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy VCC(MAX) Maximum Supply voltage VFB Analog Input Voltage Range PD Power Dissipation (TC = 25℃) - Derate above 25℃ – Pulsed (Note 1) (Note 2) 1.56 W 0.0125 W/℃ TJ Operating Junction Temperature +160 ℃ TA Operating Ambient Temperature -25 to +85 ℃ TSTG Storage Temperature Range -55 to +150 ℃ ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary Absolute Maximum Ratings TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units -- 3.6 4.5 Ω 650 -- -- V VDS = 650 V, VGS = 0 V -- -- 50 ㎂ VDS = 520 V, TC = 125℃ -- -- 200 ㎂ -- 950 1230 ㎊ -- 550 710 ㎊ -- 120 155 ㎊ -- 18 -- ㎱ -- 12 -- ㎱ -- 80 -- ㎱ -- 22 -- ㎱ -- 13 17 nC -- 2.0 -- nC -- 5.5 -- nC On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 50 ㎂ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time Tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 325 V, ID = 1 A, RG = 25 Ω (Note 4,5) VDS = 325V, ID = 1 A, VGS = 10 V (Note 4,5) Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary Electrical Characteristics ( SenseFet Part ) TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units UVLO Section VSTART Start Threshold Voltage VFB = GND 14 15 16 V VSTOP Stop Threshold Voltage VFB = GND 8.4 9 9.6 V 57 64 71 KHz -- ±5 ±10 % 73 77 82 % Oscillator Section FOSC -DMAX Initial Accuracy Frequency Change With Temperature (Note 2) -25°C ≤ Ta ≤ +85°C Maximum Duty Cycle FEEDBACK Section IFB Feedback Source Current Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA VSD Shutdown Feedback Voltage Vfb>6.5V 5.4 6 6.6 V Idelay Shutdown Delay Current Ta=25°C, 5VδVfbδVSD 4 5 6 mA 4.8 5 5.2 V -- 0.3 0.6 mV/°C 1.62 2.0 2.38 A 20 -- 23 V 140 160 -- °C Reference Section VREF Reference Output Voltage (Note 1) Ta=25°C Vref/∆T Temperature Stability (Note 1 , 2) IOVER Peak Current Limit -25°C ≤ Ta ≤ +85°C Max. inductor current Protection Section VOVP Over Voltage Protection TSD Thermal Shutdown Temperature (Tj) (Note 1) VCC > 20V -- Protection Section ISTART IOP Start-up Current VCC = 14V -- 100 170 µΑ Operating Supply Current (Control Part Only) VCC < 20V -- 3 6 mA Notes ; 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary Electrical Characteristics ( Control Part ) SPHN0365A/SPHP0365A-Preliminary Typical Characteristics (SPGP0365A) 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID, Drain Current [A] ID, Drain Current [A] Top : 100 * Notes : 1. 250us Pulse Test 2. TC = 25oC 100 ※ 101 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 6 5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 7 VGS = 10V 4 3 VGS = 20V 2 ※ 300 1 ∗ Note : TJ = 25oC 0 0 1 2 3 4 5 6 ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 800 Ciss 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 130V VGS, Gate-Source Voltage [V] 1000 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 3.0A 0 10-1 0 100 101 0 3 6 9 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 15 ◎ SEMIHOW REV.PLIMILARY”DEC 2009 (continued) (SPGP0365A) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] o TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 ID, Drain Current [A] 1 ms 10 ms 100 ms 0 10 DC 10-1 * Notes : 1. TC = 25 oC 2.0 1.5 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 102 0.0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 ZθJC(t), Thermal Response ID, Drain Current [A] 101 0.2 10-1 * Notes : 1. ZθJC(t) = 1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 PDM 0.02 0.01 t1 10-2 single pulse 10-5 10-4 10-3 10-2 t2 10-1 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary Typical Characteristics SPHN0365A/SPHP0365A-Preliminary Typical Characteristics (SPGN0365A) 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Top : 100 * Notes : 1. 250us Pulse Test 2. TC = 25oC 100 101 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR , Reverse Drain Current [A] 101 100 150oC * Note : 1. VGS = 0V 2. 250µs Pulse Test 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Ciss 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 12 VDS = 130V VGS, Gate-Source Voltage [V] 1000 Capacitances [pF] 25oC 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 3.0A 0 10-1 0 10 1 10 0 0 3 6 9 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 15 ◎ SEMIHOW REV.PLIMILARY”DEC 2009 (continued) (SPGN0365A) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 0.5 ID, Drain Current [A] ID, Drain Current [A] 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 102 ZθJC(t), Thermal Response D=0.5 0.2 101 0.1 * Notes : 1. ZθJC(t) = 80 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 100 0.02 0.01 PDM single pulse 10-1 10-5 10-4 t1 10-3 10-2 t2 10-1 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary Typical Characteristics SPHN0365A/SPHP0365A-Preliminary Package Dimension ◎ SEMIHOW REV.PLIMILARY”DEC 2009 SPHN0365A/SPHP0365A-Preliminary ◎ SEMIHOW REV.PLIMILARY”DEC 2009