FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 28 nC) transistors are produced using Corise Semiconductorÿs proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced technology has been especially tailored to • 100% avalanche tested minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ● ◀ G! G DS TO-220 TO-220F GD S FQP Series ▲ ● ● FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP8N60C - Continuous (TC = 100°C) IDM Drain Current - Pulsed FQPF8N60C Units V 7.5 7.5 * A 4.6 4.6 * A 30 30 * A 600 (Note 1) ± 30 V 230 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 14.7 4.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 147 1.18 48 0.38 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case FQP8N60C 0.85 FQPF8N60C 2.6 Units °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W Parameter Test Conditions Min Typ Max Units 600 -- -- V -- 0.7 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.75 A -- 8.7 -- S -- 965 1255 pF -- 105 135 pF -- 12 16 pF -- 16.5 45 ns -- 60.5 130 ns -- 81 170 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 7.5A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 7.5A, VGS = 10 V (Note 4, 5) -- 64.5 140 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A ISM -- -- 30 A -- -- 1.4 V -- 365 -- ns -- 3.4 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.5 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature (Note 4) FQP8N60C/FQPF8N60C Symbol FQP8N60C/FQPF8N60C VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 10 1 10 ID, Drain Current [A] 1 0 10 -1 0 10 o 25 C -1 10 2 1 10 o -55 C 0 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 o 150 C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Note : TJ = 25℃ 0.5 -1 0 5 10 15 20 10 0.2 0.4 ID, Drain Current [A] 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 0.6 Coss 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 400 1.4 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 200 0 -1 10 1.2 12 VGS, Gate-Source Voltage [V] Ciss 1200 1000 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 10 1600 1400 0.8 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : ID = 8A 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage FQP8N60C/FQPF8N60C 1.2 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 150 200 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 2 10 Operation in This Area is Limited by R DS(on) 10 µs 10 µs 100 µs 1 10 1 ms DC 0 ID, Drain Current [A] ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 2 10 10 ms 100 ms 10 -1 10 ※ Notes : o 1. TC = 25 C 100 µs 1 10 10 ms 100 ms DC 0 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 8 ID, Drain Current [A] 6 4 2 50 75 100 -2 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP8N60C 0 25 1 ms 125 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 150 Figure 9-2. Maximum Safe Operating Area for FQPF8N60C FQP8N60C/FQPF8N60C 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 -1 10 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C (t) = 0 .8 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 0 .0 1 10 PDM s in g le p u ls e -2 10 t1 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Zθ JC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FQP8N60C 10 D = 0 .5 0 0 .2 0 .1 0 .0 5 10 ※ N o te s : 1 . Z θ J C (t) = 2 .6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF8N60C 50KΩ 200nF 12V FQP8N60C/FQPF8N60C VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ID (t) VDS (t) VDD tp Time FQP8N60C/FQPF8N60C DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop VDD 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters FQP8N60C/FQPF8N60C TO-220 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 Dimensions in Millimeters FQP8N60C/FQPF8N60C TO-220F