FQPF3N60 FQPF3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V • Low gate charge ( typical 10 nC) transistors are produced using Corise Semiconductorÿs proprietary, • Low Crss ( typical 5.5 pF) planar stripe, DMOS technology. • Fast switching This advanced technology has been especially tailored to • 100% avalanche tested minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! " ! " G! GD S Absolute Maximum Ratings Symbol VDSS " " TO-220F ! FQPF Series S TC = 25°C unless otherwise noted Parameter ID Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS Gate-Source Voltage FQPF3N60 - Continuous (TC = 100°C) - Pulsed (Note 1) Units 600 V 2.0 A 1.26 A 8.0 A ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 2.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 3.4 4.5 34 0.27 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC Thermal Resistance, Junction-to-Case Parameter RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient Typ Max Units -- 3.68 °CW 0.5 -- °CW -- 62.5 °CW Symbol C = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C VDS = 600 V, VGS = 0 V -- -- 10 µA IDSS Zero Gate Voltage Drain Current -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 2.8 3.6 Ω -- 2.2 -- S -- 350 450 pF -- 50 65 pF -- 5.5 7.5 pF -- 10 30 ns VDS = 480 V, TC = 125°C On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.0 A gFS Forward Transconductance VDS = 50 V, ID = 1.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 3.0 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 3.0 A, VGS = 10 V (Note 4, 5) -- 30 70 ns -- 20 50 ns -- 30 70 ns -- 10 13 nC -- 2.7 -- nC -- 4.9 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.0 ISM -- -- 8.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.0 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 210 -- ns Qrr Reverse Recovery Charge -- 1.2 -- µC VGS = 0 V, IS = 3.0 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 92mH, IAS = 2.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 3.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature (Note 4) FQPF3N60 Electrical CharacteristicsT FQPF3N60 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 150 0 10 25 -55 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250s Pulse Test -2 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 10 VGS = 10V 8 VGS = 20V 6 4 2 0 10 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0 -1 0 1 2 3 4 5 6 7 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 600 1.2 1.4 1.6 12 Coss 300 Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 100 VGS , Gate-Source Voltage [V] 10 Ciss 400 Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 0.8 VSD , Source-Drain Voltage [V] VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 3.0 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 0 2 4 6 8 10 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics FQPF3N60 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.5 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 1.5 ID, Drain Current [A] 10 ms 0 100 ms 10 DC -1 10 Notes : 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C ( t) = 3 .6 8 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e 75 TC, Case Temperature [] VDS, Drain-Source Voltage [V] t1 t2 Z ID, Drain Current [A] 1 ms 100 µs s i n g l e p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 10 1 150 FQPF3N60 VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ID (t) VDS (t) VDD tp Time FQPF3N60 DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop VDD FQPF3N60 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 2.76 ±0.20