BVDSS = 80 V RDS(on) typ = 8.5 mΩ HRP100N08K ID = 65 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 80 V Drain Current – Continuous (TC = 25℃) 65 A Drain Current – Continuous (TC = 100℃) 46 A IDM Drain Current – Pulsed 230 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ EAR Repetitive Avalanche Energy (Note 1) 8.8 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 88 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.59 W/℃ -55 to +175 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθCS Case-to-Sink RθJA Junction-to-Ambient Typ. Max. -- 1.7 0.5 -- -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRP100N08K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- 8.5 10 mΩ Forward Transconductance VDS = 20, ID = 40 A -- 70 -- S VGS = 0 V, ID = 250 ㎂ 80 -- -- V VDS = 64 V, VGS = 0 V -- -- 1 ㎂ VDS = 64 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ -- 4900 -- ㎊ -- 300 -- ㎊ -- 230 -- ㎊ -- 1.8 -- Ω -- 50 -- ㎱ -- 50 -- ㎱ -- 130 -- ㎱ -- 40 -- ㎱ -- 73 -- nC -- 20 -- nC -- 20 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 40 V, ID = 30 A, RG = 6 Ω VDS = 64 V, ID = 30 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 65 ISM Pulsed Source-Drain Diode Forward Current -- -- 230 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 60 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 100 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=17A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Electrical Characteristics TJ=25 °C HRP100N08K Typical Characteristics VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V Top : 10 100 ID, Drain Current [A] ID, Drain Current [A] 2 * Notes : 1. 300us Pulse Test 2. TC = 25oC 175oC 10 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test 101 100 0.1 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 11.0 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 10.5 10.0 9.5 9.0 8.5 10 o 175oC 25 C 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 0.1 0.0 8.0 0 30 60 90 120 150 0.8 1.2 1.6 2.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4000 * Note ; 1. VGS = 0 V 2. f = 1 MHz 2000 Coss VGS, Gate-Source Voltage [V] 12 8000 Capacitances [pF] 0.4 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 10 8 6 4 2 VDS = 64V ID = 30A Crss 0 10-1 0 100 101 0 20 40 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 80 ◎ SEMIHOW REV.A0,December 2014 (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HRP100N08K Typical Characteristics 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 40 A 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 80 103 Operation in This Area is Limited by R DS(on) 100 µs ID, Drain Current [A] 60 1 ms 10 ms 101 DC 100 * Notes : 1. TC = 25 oC 10-1 40 20 2. TJ = 175 oC 3. Single Pulse 10-2 10-1 101 100 0 25 102 50 VDS, Drain-Source Voltage [V] 100 150 175 * Notes : 1. ZθJC(t) = 1.7 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 0.02 0.01 10-2 -5 10 125 D=0.5 0.1 10 100 Figure 10. Maximum Drain Current vs Case Temperature 0.2 -1 75 TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area ZθJC(t), Thermal Response ID, Drain Current [A] 102 PDM t1 single pulse 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Package Dimension TO-220 (A) 9.90±0.20 0 .2 ±0 0 .6 4.50±0.20 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Package Dimension TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,December 2014