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BVDSS = 80 V
RDS(on) typ = 8.5 mΩ
HRP100N08K
ID = 65 A
80V N-Channel Trench MOSFET
TO-220
FEATURES






Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 73 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V
1
2
3
1.Gate 2. Drain 3. Source
 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25℃ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
80
V
Drain Current
– Continuous (TC = 25℃)
65
A
Drain Current
– Continuous (TC = 100℃)
46
A
IDM
Drain Current
– Pulsed
230
A
VGS
Gate-Source Voltage
±25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
8.8
mJ
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
88
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.59
W/℃
-55 to +175
℃
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink
RθJA
Junction-to-Ambient
Typ.
Max.
--
1.7
0.5
--
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
December 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.2
--
3.8
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 40 A
--
8.5
10
mΩ
Forward Transconductance
VDS = 20, ID = 40 A
--
70
--
S
VGS = 0 V, ID = 250 ㎂
80
--
--
V
VDS = 64 V, VGS = 0 V
--
--
1
㎂
VDS = 64 V, TJ = 125℃
--
--
100
㎂
VGS = ±25 V, VDS = 0 V
--
--
±100
㎁
--
4900
--
㎊
--
300
--
㎊
--
230
--
㎊
--
1.8
--
Ω
--
50
--
㎱
--
50
--
㎱
--
130
--
㎱
--
40
--
㎱
--
73
--
nC
--
20
--
nC
--
20
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 40 V, ID = 30 A,
RG = 6 Ω
VDS = 64 V, ID = 30 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
65
ISM
Pulsed Source-Drain Diode Forward Current
--
--
230
VSD
Source-Drain Diode Forward Voltage
IS = 30 A, VGS = 0 V
--
--
1.3
V
trr
Reverse Recovery Time
--
60
--
㎱
Qrr
Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/μs
--
100
--
nC
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=17A, VDD=25V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
Electrical Characteristics TJ=25 °C
HRP100N08K
Typical Characteristics
VGS
15 V
10 V
8V
7V
6V
5.5 V
5V
Bottom : 4.5 V
Top :
10
100
ID, Drain Current [A]
ID, Drain Current [A]
2
* Notes :
1. 300us Pulse Test
2. TC = 25oC
175oC
10
25oC
1
* Notes :
1. VDS= 20V
2. 300us Pulse Test
101
100
0.1
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
11.0
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
100
10.5
10.0
9.5
9.0
8.5
10
o
175oC 25 C
1
* Notes :
1. VGS= 0V
2. 300us Pulse Test
∗ Note : TJ = 25oC
0.1
0.0
8.0
0
30
60
90
120
150
0.8
1.2
1.6
2.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
2000
Coss
VGS, Gate-Source Voltage [V]
12
8000
Capacitances [pF]
0.4
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
10
8
6
4
2
VDS = 64V
ID = 30A
Crss
0
10-1
0
100
101
0
20
40
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
80
◎ SEMIHOW REV.A0,December 2014
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HRP100N08K
Typical Characteristics
1.1
1.0
0.9
∗ Note :
1. VGS = 0 V
2. ID = 250µA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
∗ Note :
1. VGS = 10 V
2. ID = 40 A
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
80
103
Operation in This Area
is Limited by R DS(on)
100 µs
ID, Drain Current [A]
60
1 ms
10 ms
101
DC
100
* Notes :
1. TC = 25 oC
10-1
40
20
2. TJ = 175 oC
3. Single Pulse
10-2
10-1
101
100
0
25
102
50
VDS, Drain-Source Voltage [V]
100
150
175
* Notes :
1. ZθJC(t) = 1.7 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.05
0.02
0.01
10-2 -5
10
125
D=0.5
0.1
10
100
Figure 10. Maximum Drain Current
vs Case Temperature
0.2
-1
75
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
ZθJC(t), Thermal Response
ID, Drain Current [A]
102
PDM
t1
single pulse
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
Package Dimension
TO-220 (A)
9.90±0.20
0
.2
±0
0
.6
4.50±0.20
6.50±0.20
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
1.30±0.20
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
φ3
0.80±0.20
2.54typ
2.54typ
0.50±0.20
◎ SEMIHOW REV.A0,December 2014
HRP100N08K
Package Dimension
TO-220 (B)
±0.20
84
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
.
φ3
0
.2
±0
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
◎ SEMIHOW REV.A0,December 2014