SD101A (1N6263)...SD101C SILICON SCHOTTKY BARRIER DIODES for general purpose applications Max. 0.5 Min. 27.5 The SD101 Series is a metal on silicon Schottky barrier Max. 1.9 device which is protected by a PN junction guard ring. Black Cathode Band Black Part No. Black "ST" Brand The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing XXX Max. 3.9 ST and coupling diodes for fast switching and low logic Min. 27.5 level applications. The SD101A is equivalent to the 1N6263. This diode is also available in MiniMELF case with Glass Case DO-35 Dimensions in mm type designation LL101A, B, C. Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage SD101A SD101B SD101C Symbol Value Unit VRRM 60 50 40 V 1) Power Dissipation Ptot 400 Maximum Single Cycle Surge, 10 s Square wave IFSM 2 Junction Temperature Tj 200 O Storage Temperature Range TS - 55 to + 200 O 1) mW A C C Valid provided the leads direct at the case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 10 µA Forward Voltage at IF = 1 mA SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C at IF = 15 mA Reverse Leakage Current at VR = 50 V at VR = 40 V at VR = 30 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA , recover to 0.1 IR SD101A SD101B SD101C SD101A SD101B SD101C Symbol Min. Max. Unit V(BR)R 60 50 40 - V - 0.41 0.4 0.39 1 0.95 0.9 IR - 200 nA Ctot - 2 2.1 2.2 pF trr - 1 ns VF SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 V SD101A (1N6263)...SD101C Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Typical variation of fwd. current vs. fwd. voltage for primary conduction through the Schottky barrier mA 10 mA 100 SD101 SD101 A B C A B C 5 80 2 1 IF IF 5 2 60 40 0.1 5 20 2 0 0.01 0 0 1V 0.5 1V 0.5 VF VF Typical capacitance curve as a function of reverse voltage Typical variation of reverse current at various temperatures pF 2 SD101 A 100 o 150 C 5 SD101 o Tj=25 C 125 oC 2 100 oC 10 5 IR 75 oC 2 CT A 1 1 B C 50o C 5 2 o 25 C 0.1 5 2 0 0.01 0 10 20 30 40 50V VR 0 10 20 30 40 50V VR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007