SEMTECH_ELEC SD101A

SD101A (1N6263)...SD101C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
Max. 0.5
Min. 27.5
The SD101 Series is a metal on silicon Schottky barrier
Max. 1.9
device which is protected by a PN junction guard ring.
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
XXX
Max. 3.9
ST
and coupling diodes for fast switching and low logic
Min. 27.5
level applications.
The SD101A is equivalent to the 1N6263.
This diode is also available in MiniMELF case with
Glass Case DO-35
Dimensions in mm
type designation LL101A, B, C.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
SD101A
SD101B
SD101C
Symbol
Value
Unit
VRRM
60
50
40
V
1)
Power Dissipation
Ptot
400
Maximum Single Cycle Surge, 10 s Square wave
IFSM
2
Junction Temperature
Tj
200
O
Storage Temperature Range
TS
- 55 to + 200
O
1)
mW
A
C
C
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 10 µA
Forward Voltage
at IF = 1 mA
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
at IF = 15 mA
Reverse Leakage Current
at VR = 50 V
at VR = 40 V
at VR = 30 V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA , recover to 0.1 IR
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
Symbol
Min.
Max.
Unit
V(BR)R
60
50
40
-
V
-
0.41
0.4
0.39
1
0.95
0.9
IR
-
200
nA
Ctot
-
2
2.1
2.2
pF
trr
-
1
ns
VF
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
V
SD101A (1N6263)...SD101C
Typical forward conduction curve
of combination Schottky barrier
and PN junction guard ring
Typical variation of fwd. current
vs. fwd. voltage for primary conduction
through the Schottky barrier
mA
10
mA
100
SD101
SD101
A
B
C
A
B
C
5
80
2
1
IF
IF
5
2
60
40
0.1
5
20
2
0
0.01
0
0
1V
0.5
1V
0.5
VF
VF
Typical capacitance curve as a
function of reverse voltage
Typical variation of reverse current
at various temperatures
pF
2
SD101
A
100
o
150 C
5
SD101
o
Tj=25 C
125 oC
2
100 oC
10
5
IR
75 oC
2
CT
A
1
1
B
C
50o C
5
2
o
25 C
0.1
5
2
0
0.01
0
10
20
30
40
50V
VR
0
10
20
30
40
50V
VR
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007