SEMTECH_ELEC SD103B

SD103A...SD103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD103A, B, C is a metal on silicon Schottky barrier
Max. 0.5
device which is protected by a PN junction guard ring.
Min. 27.5
Max. 1.9
The low forward voltage drop and fast switching make
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
XXX
Max. 3.9
ST
level applications. Other uses are for click suppression,
efficient full wave bridges in telephone subsets, and as
Min. 27.5
blocking diodes in rechargeable low voltage battery
system.
Glass Case DO-35
Dimensions in mm
This diode is also available in MiniMELF case with type
designation LL103A, B, C.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
SD103A
SD103B
SD103C
Symbol
Value
Unit
VRRM
40
30
20
V
1)
Power Dissipation
Ptot
400
Single Cycle Surge 60 Hz Sine Wave
IFSM
15
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
- 55 to + 175
O
1)
mW
A
C
C
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 20 mA
at IF = 200 mA
Reverse Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA to 200 mA , recover to 0.1 IR
SD103A
SD103B
SD103C
Symbol
Typ.
Max.
Unit
VF
VF
-
0.37
0.6
V
V
IR
-
5
µA
Ctot
50
-
pF
trr
10
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
SD103A...SD103C
Typical high current forward
conduction curve
Typical variation of fwd. current
vs.fwd.voltage for primary conduction
through the Schottky barrier
tp=300 s, duty cycle=2%
A
mA
SD103
103
10 2
IF
SD103
5
IF
4
10
3
1
2
10 -1
1
10 -2
0
0
0.5
0
1V
0.5
1
1.5V
VF
VF
Typical variation of reverse current
at various temperatures
Typical non repetitive forward surge
current versus pulse width
Rectangular pulse
A
A
SD103
50
IF
SD103
103
40
IR
Tamb=125o C
100 oC
10 2
75 oC
30
10
50 oC
20
25 oC
1
10
10 -1
0
10 -3 10 -2 10 -1
1
10
10 2 103 ms
0
10
20
30
40
Typical capacitance
versus reverse voltage
Blocking voltage deration
versus temperature at various
average forward currents
pF
V
SD103
100
SD103
50
50V
VR
tp
7
Ctot
VR 40
5
4
3
100 mA
2
30
200 mA
10
I F =400 mA
20
7
5
4
3
10
2
0
0
o
200 C
100
1
0
10
20
Tamb
30
40
50V
VR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007