1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data • Case: Molded plastic, DO-41 Dimensions in mm Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Parameter Symbols 1N5817 1N5818 1N5819 Units Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at TL = 90 OC I(AV) 1 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 OC IFSM 25 A Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage VF TA = 25 OC TA = 100 OC IR 0.55 0.875 50 15 CJ 110 Tj ,Tstg - 65 to + 125 Typical Junction Capacitance 0.6 0.9 V 1 10 RθJL RθJA Typical Thermal Resistance Storage and Operating Junction Temperature Range 0.45 0.75 mA O C/W pF O C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2008 1N5817 THRU 1N5819 AVERAGE FORWARD CURRENT AMPERES 1 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 0.75 0.5 0.25 0 0 20 60 40 80 100 120 140 PEAK FORWARD SURGE CURRENT AMPERES Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1-FORWARD CURRENT DERATING CURVE 30 TJ =TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz o LEAD TEMPERATURE, ( C) Fig.4- TYPICAL REVERSE CHARACTERISTICS Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT AMPERES 100 50 10 o Tj=125 C Pulse Width=300 S 1% Duty Cycle 1 o Tj=25 C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 TJ =125 oC 1 0 o TJ =75 C 0.01 o TJ =25 C 0.001 0 INSTANTANEOUS FORWARD VOLTAGE VOLTS TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE,pF o 400 o 10 Tj=25 C f=1.0MHz Vsig=50mVp-p 0.1 1 10 40 60 100 80 Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE Fig.5- TYPICAL JUNCTION CAPACITANCE 100 20 PERCENT OF RATED PEAK REVERSE VOLTAGE,% 100 100 10 1 0.1 0.01 REVERSE VOLTAGE, VOLTS 0.1 1 10 100 t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/11/2008