S1A THRU S1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage – 50 to 1000 V Forward Current – 1 A Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Glass passivated chip junction • For surface mount application • Low profile package • Built-in strain relief, ideal for automated placement Mechanical Data • Case: SMA (DO-214AC), molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end Absolute Maximum Ratings and Characteristics Ratings at 25O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 1 A Peak Forward Surge Current , 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A VF 1.1 V IR 5 50 μA CJ 12 pF RθJA RθJL 75 27 TJ, TS - 55 to +1 50 Maximum Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25 OC at TA = 125 OC Typical Junction Capacitance at VR = 4 V, f = 1 MHz Typical Thermal Resistance 1) Operating and Storage Temperature Range 1) C/W O C O Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad areas SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 S1A THRU S1M FIG.2- PEAK FORWARD SURGE CURRENT FIG.1-FORWARD DERATING CURVE AVERAGE FORWARD CURRENT, A PEAK FORWARD SURGE CURRENT, A 100 1.2 RESISTIVE OR INDUCTIVE LOAD 1 0.8 0.6 S1(A.J) 0.4 S1(K.M) 0.2x0.2(5.0x5.0mm) Thick copper pad areas 0.2 0 0 20 40 60 80 120 140 100 TL =110 C 8.3ms Single half Sine Wave (JEDEC Method) S1(A.J) 10 S1(K.M) 1 160 1 LEAD TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL REVERSE CHARACTERISTICS 100 10 1 o TJ =25 C PULSE WIDTH=300 s 1% DUTY CYCLE 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 INSTANTANEOUS REVERSE CURRENT( A) INSTANTANEOUS FORWARD CURRENT(A) FIG.3-TYPICAL FORWARD CHARACTERISTICS 0.1 100 10 2.0 10 TJ=125 C 1 TJ=75 C 0.1 TJ =25 C 0.01 0.001 INSTANTANEOUS FORWARD VOLTAGE (V) 0 20 40 60 100 80 PERCENT OF RATED PEAK REVERSE VOLTS,% JUNCTION CAPACITANCE, pF 100 TJ=25 C f=1.0MHz Vsig=50mVp-p 10 1 0.01 0.1 1 10 100 TRANSIENT THERMAL IMPEDANCE ( oC/W) FIG.5- TYPICAL JUNCTION CAPACITANCE FIG.6- TRANSIENT THERMAL IMPEDANCE 1000 S1(K.M) 100 S1(A.J) 10 1 0.01 0.1 1 10 100 t, PULSE DURATION REVERSE VOLTAGE, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008