MMBD202CCW SILICON EPITAXIAL PLANAR SWITCHING DIODE Application • Ultra high speed switching 3 1 2 Marking Code: PH Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Maximum Peak Forward Current IFM 300 mA Surge Current (t = 1 µs) IFSM 4 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 55 to + 150 O Symbol Max. Unit VF 1.2 V IR 0.1 µA CT 3.5 pF trr 4 ns Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Total Capacitance at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008 MMBD202CCW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008