SEMTECH_ELEC MMBD202CCW

MMBD202CCW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application
• Ultra high speed switching
3
1
2
Marking Code: PH
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
80
V
Reverse Voltage
VR
80
V
Average Forward Current
IO
100
mA
Maximum Peak Forward Current
IFM
300
mA
Surge Current (t = 1 µs)
IFSM
4
A
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
Ts
- 55 to + 150
O
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
CT
3.5
pF
trr
4
ns
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 70 V
Total Capacitance
at VR = 6 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 5 mA, RL = 50 Ω
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/10/2008
MMBD202CCW
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/10/2008