S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5 ±0.2 4.5±0.2 FEATURE Power dissipation W Tamb=25 C 0.625 14.3 ±0.2 PCM : Collector current 0.5 ICM: Collector-base voltage A V(BR)CBO : 40 V 0.43 +0.08 –0.07 0.46 +0.1 –0.1 (1.27 Typ.) Operating and storage junction temperature range Tj, Tstg: -55 +0.2 1.25–0.2 to +150 C 1 2 3 1: Emitter 2: Base 3: Collector 2.54 ±0.1 ELECTRICAL CHARACTERISTICS˄Tamb=25ć Symbol Parameter unless Test otherwise conditions specified˅ MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100A ˈ IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100Aˈ IC=0 5 V IB=0 Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A Collector cut-off current ICEO VCE=20V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE=1V, IC=50mA 64 hFE(2) VCE=1V, IC= 500mA 40 300 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V,IC=20mA, 150 f=30MHz MHz CLASSIFICATION OF hFE(1) Rank D E F G H I Range 64-91 78-112 96-135 112-166 144-202 190-300 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 S9013T NPN Epitaxial Silicon Transistor Elektronische Bauelemente Typical Characteristics IB = 160μA IC [mA], COLLECTOR CURRENT 18 1000 IB = 140μA VCE = 1V 16 IB = 120μA 14 IB = 100μA hFE, DC CURRENT GAIN 20 12 10 IB = 80μA 8 IB = 60μA 6 IB = 40μA 4 100 10 IB = 20μA 2 0 1 0 10 20 30 40 50 1 VCE [V], COLLECTOR-EMITTER VOLTAGE 1000 VBE (sat) 100 VCE (sat) 10 1000 10000 IC [mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE IC = 10 IB 100 1000 10000 Figure 2. DC current Gain 10000 10 100 IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 10 1000 VCE = 6V 100 10 1 1 10 100 1000 10000 IC [mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2