1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 12 V Reverse Voltage VR 10 V Average Forward Current IO 50 mA Maximum Peak Forward Current IFM 150 mA Non-Repetitive Peak Forward Surge Current ( t = 10 ms) IFSM 1 A Power Dissipation Pd 150 mW Junction Temperature Tj 125 O Tstg - 55 to + 125 O Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 50 mA VF - 1 V Reverse Current at VR = 10 V IR - 500 nA V(BR)R 12 - V CT - 4.5 pF Reverse Breakdown Voltage at IR = 10 µA Total Capacitance at VR = 0 , f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 1SS321 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007