MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS ≤ 20 KΩ) VDGR 50 V Gate-Source Voltage - Continuous Gate-Source Voltage - Non-Repetitive (TP < 50 µs) Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation Operating and Storage Temperature Range VGSS ID ± 20 V ± 40 220 mA 880 Ptot 360 mW Tj, Ts - 55 to + 150 Symbol Value Unit RθJA 350 K/W C O Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 MMFTN138 Characteristics at Ta = 25 OC unless otherwise specified Parameter Symbol Min. Max. Unit V(BR)DSS 50 - V IDSS - 500 100 nA IGSS - ± 100 nA VGS(th) 0.8 1.6 V RDS(on) - 3.5 6 Ω gFS 0.12 - S Ciss - 60 pF Coss - 25 pF Crss - 10 pF Turn-On Delay Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(on) - 8 ns Turn-On Rise Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω tr - 12 ns td(off) - 16 ns tf - 22 ns Symbol Min. Max. Unit Maximum Continuous Source Current IS - 220 mA Maximum Pulse Source Current ISM - 880 mA Drain-Source Diode Forward Voltage at IS = 440 mA VGD - 1.4 V Drain-Source Breakdown Voltage at ID = 250 µA Drain-Source Leakage Current at VDS = 50 V at VDS = 30 V Gate-Source Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VGS = VDS, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 220 mA at VGS = 4.5 V, ID = 220 mA Forward Transconductance at VDS = 10 V, ID = 220 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn-Off Delay Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-Off Fall Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Drain-Source Diode Characteristics and Maximum Ratings Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006