SEMTECH_ELEC MMBD204SEW

MMBD204SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications
• Ultra high speed switching
1
2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRM
20
V
Reverse Voltage
VR
20
V
Average Rectified Forward Current
IO
100
mA
Maximum (Peak) Forward Current (Single)
IFM
200
mA
Peak Forward Surge Current (tp = 1 µs)
IFSM
300
mA
Power Dissipation
Pd
200
mW
Junction Temperature
TJ
150
O
Storage Temperature Range
Ts
- 55 to + 150
O
Symbol
Max.
Unit
Forward Voltage
at IF = 10 mA
VF
1
V
Reverse Current
at VR = 15 V
IR
0.1
µA
Capacitance between Terminals
at VR = 6, f = 1 MHz
CT
4
pF
C
C
Characteristics at Ta = 25 OC
Parameter
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
MMBD204SEW
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008