RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification 3 Features • High reliability • Low reverse current 1 2 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Rectified Forward Current IO 30 mA IFSM 200 mA Tj 125 O Tstg - 55 to + 125 O Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA VF - - 0.37 V Reverse Current at VR = 10 V IR - - 1 µA V(BR)R 45 - - V CT - 2 - pF Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009 RB706F-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009