MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor SOT-23 Plastic Package o Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Total Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 55 to + 150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 4 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 25 V Emitter Cutoff Current at VEB = 2 V Collector Emitter Saturation Voltage at IC = 4 mA, IB = 0.4 mA Base-Emitter On Voltage at VCE = 10 V, IC = 4 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 4 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Collector Base Feedback Capacitance MMBTA10 VCB = 10 V, f = 1 MHz MMBTA11 Symbol Min Max Unit hFE 60 - - V(BR)CBO 30 - V V(BR)CEO 25 - V V(BR)EBO 3 - V ICBO - 100 nA IEBO - 100 nA VCE(sat) - 0.5 V VBE(on) - 0.95 V fT 650 - MHz Ccb - 0.7 pF Crb 0.35 0.6 0.65 0.9 pF pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/06/2006