SEMTECH_ELEC MPSA64

MPSA63 / 64
PNP Silicon Epitaxial Planar Transistor
Darlington Transistor
for high gain amplification
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCES
30
V
Emitter Base Voltage
-VEBO
10
V
Collector Current
-IC
500
mA
Total Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 10 V
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 100 µA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 100 mA
Transition Frequency
at -VCE = 5 V, IE = 10 mA
MPSA63
MPSA64
MPSA63
MPSA64
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
5000
10000
10000
20000
-
-
-ICBO
-
100
nA
-IEBO
-
100
nA
-V(BR)CES
30
-
V
-VCE(sat)
-
1.5
V
VBE(on)
-
2
V
fT
125
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2007
MPSA63 / 64
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2007