MMBTSC3876 NPN Silicon Epitaxial Planar Transistor for general purpose application The transistor is subdivided into three groups O, Y and G according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 50 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Power Dissipation C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 6 V, IC = 400 mA Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Transition Frequency at VCE = 6 V, IC = 20 mA Collector Base Capacitance at VCB = 6 V, f = 1 MHz O Y G O Y, G Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 70 120 200 25 40 - 140 240 400 - - ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.25 V VBE - - 1 V fT - 300 - MHz Ccb - 7 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/04/2007 MMBTSC3876 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/04/2007