SEMTECH_ELEC MMBTSC5345

MMBTSC5345
NPN Silicon Epitaxial Planar Transistor
for RF amplifier.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 +150
O
C
C
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
40
70
120
-
80
140
240
-
VCE(sat)
-
-
0.3
V
ICBO
-
-
0.5
µA
IEBO
-
-
0.5
µA
Collector Base Breakdown Voltage
at IC=10µA
V(BR)CBO
30
Collector Emitter Breakdown Voltage
at IC=5mA
V(BR)CEO
20
-
-
V
Emitter Base Breakdown Voltage
at IE=10µA
V(BR)EBO
4
-
-
V
Transition Frequency
at VCE=6V, IE=-1mA
fT
-
550
-
MHz
Output Capacitance
at VCB=6V, f=1MHz
COB
-
1.4
DC Current Gain
at VCE=6V, IC=1mA Current Gain Group
Collector Emitter Saturation Voltage
at IC=10mA, IB=1mA
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=4V
R
O
Y
V
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005
MMBTSC5345
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005
MMBTSC5345
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005