MMBTSC3928 NPN Silicon Epitaxial Planar Transistor for low frequency amplification applications The transistor is subdivided into four groups Q, R, S and T, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group at VCE = 6 V, IC = 0.1 mA Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 100 µA Emitter Base Breakdown Voltage at IC = 100 µA Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, -IE = 10 mA Collector Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, -IE= 0.1 mA, f = 1 KHz, RG = 2 KΩ Q R S T Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 120 180 270 390 70 - 270 390 560 820 - - V(BR)CBO 50 - - V V(BR)CEO 50 - - V V(BR)EBO 6 - - V ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.3 V fT - 200 - MHz Cob - 4 - pF NF - - 15 dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 05/08/2006 MMBTSC3928 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 05/08/2006