MMBTSA1235 PNP Silicon Epitaxial Planar Transistor for low frequency amplification applications The transistor is subdivided into two groups E and F, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group at -VCE = 6 V, -IC = 0.1 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IC = 100 µA Collector Cutoff Current at -VCB = 60 V Emitter Cutoff Current at -VEB = 6 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 10 mA Collector Output Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, IE= 0.3 mA, f = 100 Hz, RG = 10 KΩ E F Symbol Min. Typ. Max. Unit hFE hFE hFE 150 250 90 - 300 500 - - -V(BR)CBO 60 - - V -V(BR)CEO 50 - - V -V(BR)EBO 6 - - V -ICBO - - 0.1 µA -IEBO - - 0.1 µA -VCE(sat) - - 0.3 V -VBE(sat) - - 1 V fT - 200 - MHz Cob - 4 - pF NF - - 20 dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 05/08/2006 MMBTSA1235 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 05/08/2006