MMBTSA1036 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSA1036 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group P Q hFE 82 - 180 - hFE 120 - 270 - R hFE 180 - 390 - -V(BR)CBO 40 - - V -V(BR)CEO 32 - - V -V(BR)EBO 5 - - V -ICBO - - 1 μA -IEBO - - 1 μA -VCE(sat) - - 0.6 V fT - 200 - MHz Cob - 7 - pF DC Current Gain at -VCE=3V, -IC=100mA Collector-base breakdown voltage at -IC=100μA Collector-emitter breakdown voltage at -IC=1mA Emitter-base breakdown voltage at -IC=100μA Collector Cutoff Current at -VCB=20V Emitter Cutoff Current at -VEB=4V Collector Saturation Voltage at -IC=300mA, -IB=30mA Transition Frequency at -VCE=5V, -IE=20mA, f=100MHz Collector Output Capacitance at -VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005