MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature • Voltage controlled small signal switch • High saturation current capability Drain Gate 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Source Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤ 1 MΩ) VDGR 60 V Gate-Source Voltage VGSS ± 20 V ID 500 800 mA Ptot 300 mW Tj, Ts - 55 to + 150 Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation Operating and Storage Temperature Range C O Characteristics at Ta = 25 OC Parameter Drain-Source Breakdown Voltage at ID = 100 µA Zero Gate Voltage Drain Current at VDS = 25 V Gate-Body Leakage, Forward at VGS = 15 V Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA Static Drain-Source On-Resistance at VGS = 10 V, ID = 200 mA Forward Transconductance at VDS ≥ 2 VDS(on), ID = 200 mA Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Turn-On Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω Turn-Off Delay Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω Symbol Min. Typ. Max. Unit V(BR)DSS 60 - - V IDSS - - 0.5 µA IGSSF - - 10 nA VGS(th) 0.8 - 3 V RDS(on) - - 5 Ω gFS - 320 - mS Ciss - - 40 pF Coss - - 30 pF Crss - - 10 pF t(on) - - 10 ns t(off) - - 10 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 10/02/2007