MMFTN170 MMFTN170 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N N Version 2015-05-12 Type Code 1 1.3±0.1 3 2.4 ±0.2 0.4 +0.1 -0.05 Power dissipation – Verlustleistung +0.1 1.1 -0.2 2.9 ±0.1 2 1.9±0.1 Dimensions - Maße [mm] 1=G 2=S 3=D 300 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN170 Drain-Source-voltage – Drain-Source-Spannung G short VDSS 60 V RGS < 1 MΩ VDGR 60 V Gate-Source-voltage continuos Gate-Source-Spannung dauernd VGSS ± 20 V Power dissipation – Verlustleistung Ptot 300 mW Drain current continuos – Drainstrom (dc) ID 500 mA Peak Drain current – Drain-Spitzenstrom IDM 800 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C Drain-Gate-voltage – Drain-Gate-Spannung © Diotec Semiconductor AG http://www.diotec.com/ 1 MMFTN170 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 100 µA V(BR)DSS Drain-Source leakage current – Drain-Source Leckstrom 60 V G short VDS = 25 V IDSS 0.5 µA IGSS 10 nA Gate-Body leakage current – Gate-Substrat Leckstrom VGS = 15 V Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 200 mA RDS(on) Forward Transconductance – Übertragungssteilheit VDS > 2 VDS(on), ID = 200 mA 5Ω gFS 320 mS Ciss 40 pF Coss 30 pF Crss 10 pF Input Capacitance – Eingangskapazität VDS = 10 V, f = 1 MHz Output Capacitance – Ausgangskapazität VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 10 V, f = 1 MHz Turn-On Time – Einschaltzeit VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω td(on) 10 ns td(off) 10 ns Turn-Off Delay Time – Ausschaltverzögerung VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω 2 http://www.diotec.com/ © Diotec Semiconductor AG