Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KSS84 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance 0.4 3 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Switching Speed +0.05 0.1-0.01 +0.1 0.97-0.1 Low Input/Output Leakage 0-0.1 Absolute Maximum Ratings Ta = 25 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector unless otherwise specified Parameter Drain-Source Voltage Drain-Gate Voltage RGS +0.1 0.38-0.1 Also Available in Lead Free Version 20KÙ Gate-Source Voltage Continuous Drain Current * Continuous Symbol Rating Unit VDSS -50 V VDGR -50 V VGSS Total Power Dissipation * Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range V 20 ID -130 mA Pd 300 mW RèJA 417 /W Tj, TSTG -55 to +150 * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; Electrical Characteristics Ta = 25 Parameter unless otherwise specified Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) Testconditons VGS = 0V, ID = -250ìA Max Unit V -15 ìA VDS = -50V, VGS = 0V, TJ = 125 -60 ìA VDS = -25V, VGS = 0V, TJ = 25 -100 nA VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A Forward Transconductance gFS VDS = -25V, ID = -0.1A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Typ -50 VDS = -50V, VGS = 0V, TJ = 25 RDS (ON) Static Drain-Source On-Resistance Min -0.8 10 nA -2.0 V 10 Ù 45 pF 25 pF 12 pF 0.05 S VDS = -25V, VGS = 0V,f = 1.0MHz Crss Turn-On Delay Time tD(ON) VDD = -30V, ID = -0.27A, 10 ns Turn-Off Delay Time tD(OFF) RGEN = 50Ù, VGS = -10V 18 ns Marking Marking K84 www.kexin.com.cn 1