KEXIN KSS84

Transistors
IC
SMD Type
P-Channel Enhancement Mode Field Effect Transistor
KSS84
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Low On-Resistance
0.4
3
1
Low Input Capacitance
0.55
Low Gate Threshold Voltage
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Fast Switching Speed
+0.05
0.1-0.01
+0.1
0.97-0.1
Low Input/Output Leakage
0-0.1
Absolute Maximum Ratings Ta = 25
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
unless otherwise specified
Parameter
Drain-Source Voltage
Drain-Gate Voltage RGS
+0.1
0.38-0.1
Also Available in Lead Free Version
20KÙ
Gate-Source Voltage
Continuous
Drain Current *
Continuous
Symbol
Rating
Unit
VDSS
-50
V
VDGR
-50
V
VGSS
Total Power Dissipation *
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
20
ID
-130
mA
Pd
300
mW
RèJA
417
/W
Tj, TSTG
-55 to +150
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
Electrical Characteristics Ta = 25
Parameter
unless otherwise specified
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate Threshold Voltage
VGS(th)
Testconditons
VGS = 0V, ID = -250ìA
Max
Unit
V
-15
ìA
VDS = -50V, VGS = 0V, TJ = 125
-60
ìA
VDS = -25V, VGS = 0V, TJ = 25
-100
nA
VGS =
20V, VDS = 0V
VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
VDS = -25V, ID = -0.1A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Typ
-50
VDS = -50V, VGS = 0V, TJ = 25
RDS (ON)
Static Drain-Source On-Resistance
Min
-0.8
10
nA
-2.0
V
10
Ù
45
pF
25
pF
12
pF
0.05
S
VDS = -25V, VGS = 0V,f = 1.0MHz
Crss
Turn-On Delay Time
tD(ON)
VDD = -30V, ID = -0.27A,
10
ns
Turn-Off Delay Time
tD(OFF)
RGEN = 50Ù, VGS = -10V
18
ns
Marking
Marking
K84
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