MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features • High-speed switching • No secondary breakdown 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Applications • Thin and thick film circuits • General purpose fast switching applications Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage (open drain) VGSO ± 20 V Drain Current ID 100 mA Peak Drain Current IDM Total Power Dissipation 300 mA Ptot 1) 300 mW Ptot 2) 250 mW Junction Temperature Tj 150 O C Storage Temperature Range Ts - 65 to + 150 O Symbol Value Unit 430 1) K/W 500 2) K/W C Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient 1) 2) RθJA RθJA Device mounted on a ceramic substrate 10 X 8 X 0.7 mm. Device mounted on a printed-circuit board. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 MMFTN20 Characteristics at Ta = 25 OC unless otherwise specified Parameter Symbol Min. Max. Unit V(BR)DSS 50 - V IDSS - 1 µA IGSS - ± 100 nA VGS(th) 0.4 1.8 V - 15 20 30 |yfs| 40 - mS Ciss - 15 pF Coss - 15 pF Crss - 5 pF Turn-On Time at VGS = 0 to 10 V, VDD = 20 V, ID = 100 mA t(on) - 5 ns Turn-Off Time at VGS = 10 to 0 V, VDD = 20 V, ID = 100 mA t(off) - 10 ns Drain-Source Breakdown Voltage at ID = 10 µA Drain-Source Leakage Current at VDS = 40 V Gate-Source Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 100 mA at VGS = 5 V, ID = 100 mA at VGS = 2.5 V, ID = 10 mA Forward Transfer Admittance at VDS = 10 V, ID = 100 mA Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz RDS(on) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 Ω