BAV200~BAV203 SILICON EPITAXIAL PLANAR DIODES Switching Diode LS-34 Applications: General Purposes QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage BAV200 BAV201 BAV202 BAV203 VRRM 60 120 200 250 V Reverse Voltage BAV200 BAV201 BAV202 BAV203 VR 50 100 150 200 V Forward Current IF 250 mA Forward Peak Current (at f = 50 Hz) IFM 625 mA Peak Forward Surge Current (at tp = 1 s) IFSM 1 A Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O Symbol Max. Unit RthJA 500 K/W C C Maximum Thermal Resistance at Tj = 25 OC Parameter Thermal Resistance Junction to Ambient at on PC board 50 mm X 50 mm X 1.6 mm SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007 BAV200~BAV203 Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit VF - - 1 V BAV200 BAV201 BAV202 BAV203 IR - - 100 100 100 100 nA nA nA nA BAV200 BAV201 BAV202 BAV203 V(BR) 60 120 200 250 - - V V V V rf - 5 - Ω Capacitance at VR = 0, f = 1MHz CD - 1.5 - pF Reverse Recovery Time at IF = 30 mA, IR = 30 mA, IR = 3 mA, RL = 100 Ω trr - - 50 ns Forward Voltage at IF = 100 mA Reverse Current at VR = 50 V at VR = 100 V at VR = 150 V at VR = 200 V Breakdown Voltage at IR = 100 µA Differential Forward Resistance at IF = 10 mA Characteristics (Tj=25°C unless otherwise specified) 1000 IF - Forward Current (mA) IR - Reverse Current ( A) 1000 100 Scattering Limit 10 1 VR=VRRM 0.1 0.01 0 40 80 120 160 200 Tj - Junction Temperature (°C) Fig 1. Reverse Current vs. Junction Temperature Tj =25°C 100 Scattering Limit 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) Fig 2. Forward Current vs. Forward Voltage SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007