LL103A...LL103C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL103A, B, C is a metal on Silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other uses are for click suppression, efficient full wave bridges in telephone subsets, and as blocking diodes in rechargeable low voltage battery systems. This diode is also available in DO-35 case with type designation SD103A, B, C. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit VRRM VRRM VRRM 40 30 20 V V V Power Dissipation (Infinite Heatsink) Tc = 3/8 from body o o Derates at 4 mW/ C to 0 at 125 C Ptot 400 Single Cycle Surge 60Hz sinewave IFSM 15 Tj 125 O -55 to +175 O LL103A LL103B LL103C Peak Reverse Voltage Junction Temperature Storage Temperature Range 1) TS 1) mW A C C Valid provided that electrodes are kept at ambient temperature. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 LL103A...LL103C Characteristics at Tamb = 25oC Symbol Min. Typ. Max. Unit at IF = 20mA VF - - 0.37 V at IF = 200mA Leakage Current VF - - 0.6 V IR - - 5 uA IR - - 5 uA IR - - 5 uA Ctot - 50 - pF trr - 10 - ns Forward Voltage at VR = 30V LL103A LL103B LL103C at VR = 20V at VR=10V Junction Capacitance at VR = 0V, f = 1MHz Reverse Recovery Time at IF = IR = 5mA to 200 mA , recover to 0.1 IR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 LL103A...LL103C Typical variation of fwd. current vs.fwd.voltage for primary conduction through the Schottky barrier Typical high current forward conduction curve mA A 10 LL103 3 10 2 IF tp=300 s, duty cycle=2% LL103 5 IF 4 10 3 1 2 10 -1 1 10 -2 0 0.5 0 0 1V 0.5 1 1.5V VF VF Typical variation of reverse current at various temperatures Typical non repetitive forward surge current versus pulse width Rectangular pulse A A LL103 50 IF 40 10 3 IR LL103 Tamb=125o C 100 oC 10 2 75 oC 30 10 50 oC 20 25 oC 1 10 10 -1 0 10 -3 10 -2 10 -1 1 10 10 2 103 ms 0 10 tp 20 30 40 50V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 LL103A...LL103C Typical capacitance versus reverse voltage Blocking voltage deration versus temperature at various average forward currents pF V LL103 50 LL103 100 7 Ctot VR 40 5 4 3 100 mA 2 30 200 mA 10 I F =400 mA 20 7 5 4 3 10 2 0 0 o 200 C 100 1 0 Tamb 10 20 30 40 50V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002