ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO 6 V IC 600 Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Ptot Tj TS 625 mA 1) mW 150 o - 55 to + 150 o C C Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006 ST 2N5550 / 2N5551 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE 60 80 60 80 20 30 250 250 - - ST 2N5550 V(BR)CEO ST 2N5551 V(BR)CEO 140 160 - V V ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO 160 180 - V V V(BR)EBO 6 - V ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 Collector Emitter Breakdown Voltage at IC = 1 mA Collector Base Breakdown Voltage at IC = 100 µA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 100 V ST 2N5550 ICBO - 100 nA at VCB = 120 V ST 2N5551 ICBO - 50 nA IEBO - 50 nA VCE sat - 0.15 V ST 2N5550 VCE sat - 0.25 V ST 2N5551 VCE sat - 0.2 V VBE sat - 1 V ST 2N5550 VBE sat - 1.2 V ST 2N5551 VBE sat - 1 V fT 100 300 MHz CCBO - 6 pF at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550 NF - 10 dB ST 2N5551 NF RthA - 8 1) 200 dB K/W Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Noise Figure Thermal Resistance Junction to Ambient 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006 ST 2N5550 / 2N5551 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006