SEMTECH_ELEC ST2N5551

ST 2N5550 / 2N5551
NPN Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier
applications.
As complementary types the PNP transistors
ST 2N5400 and ST 2N5401 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
ST 2N5550
ST 2N5551
VCEO
VCEO
140
160
V
V
Collector Base Voltage
ST 2N5550
ST 2N5551
VCBO
VCBO
160
180
V
V
VEBO
6
V
IC
600
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Ptot
Tj
TS
625
mA
1)
mW
150
o
- 55 to + 150
o
C
C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2006
ST 2N5550 / 2N5551
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 50 mA
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
hFE
60
80
60
80
20
30
250
250
-
-
ST 2N5550 V(BR)CEO
ST 2N5551 V(BR)CEO
140
160
-
V
V
ST 2N5550 V(BR)CBO
ST 2N5551 V(BR)CBO
160
180
-
V
V
V(BR)EBO
6
-
V
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
Collector Emitter Breakdown Voltage
at IC = 1 mA
Collector Base Breakdown Voltage
at IC = 100 µA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Cutoff Current
at VCB = 100 V
ST 2N5550
ICBO
-
100
nA
at VCB = 120 V
ST 2N5551
ICBO
-
50
nA
IEBO
-
50
nA
VCE sat
-
0.15
V
ST 2N5550
VCE sat
-
0.25
V
ST 2N5551
VCE sat
-
0.2
V
VBE sat
-
1
V
ST 2N5550
VBE sat
-
1.2
V
ST 2N5551
VBE sat
-
1
V
fT
100
300
MHz
CCBO
-
6
pF
at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550
NF
-
10
dB
ST 2N5551
NF
RthA
-
8
1)
200
dB
K/W
Emitter Cutoff Current
at VEB = 4 V
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
Thermal Resistance Junction to Ambient
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2006
ST 2N5550 / 2N5551
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2006