Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage VCBO 160 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 140 160 — — 160 180 — — 6.0 — Vdc — — — — 100 50 100 50 nAdc — 50 OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO µAdc nAdc 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N5550 2N5551 60 80 — — (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 60 80 250 250 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 20 30 — — Both Types — 0.15 2N5550 2N5551 — — 0.25 0.20 Both Types — 1.0 2N5550 2N5551 — — 1.2 1.0 fT 100 300 MHz Cobo — 6.0 pF — — 30 20 50 200 — — 10 8.0 Characteristic Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2N5550 2N5551 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) hfe pF NF 2N5550 2N5551 — dB 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 500 300 h FE, DC CURRENT GAIN 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 – 55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 101 IC, COLLECTOR CURRENT ( µA) VCE = 30 V 100 TJ = 125°C 10–1 10–2 75°C 10–3 REVERSE FORWARD 25°C 10–4 10–5 0.4 IC = ICES 0.3 0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut–Off Region 1.0 2.5 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 1.0 2.0 3.0 5.0 10 20 30 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 50 2.0 1.0 qVC for VCE(sat) 0.5 0 – 0.5 – 1.0 qVB for VBE(sat) – 1.5 – 2.0 – 2.5 0.1 100 TJ = – 55°C to +135°C 1.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k RC RB Vout 5.1 k Vin 100 1N914 Values Shown are for IC @ 10 mA Figure 6. Switching Time Test Circuit 4 TJ = 25°C 30 C, CAPACITANCE (pF) VCC 30 V VBB – 8.8 V Vin 100 Figure 5. Temperature Coefficients 100 70 50 10.2 V 50 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data 5000 1000 IC/IB = 10 TJ = 25°C 500 1000 tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 500 300 ts @ VCC = 120 V 200 20 10 0.2 0.3 0.5 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V t, TIME (ns) t, TIME (ns) 200 2000 tr @ VCC = 120 V 300 tf @ VCC = 120 V 3000 100 1.0 20 30 50 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 8. Turn–On Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 50 0.2 0.3 0.5 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 200 Figure 9. Turn–Off Time 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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