ON Semiconductor 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 2 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 150 — 160 — 5.0 — — — 50 50 — 50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc V(BR)EBO Vdc Vdc ICBO 2N5401 2N5401 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 1 Publication Order Number: 2N5401/D 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 50 60 50 — 240 — — — 0.2 0.5 — — 1.0 1.0 100 300 — 6.0 40 200 — 8.0 Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. http://onsemi.com 2 MHz pF — dB 2N5401 200 h FE, CURRENT GAIN 150 TJ = 125°C 100 25°C 70 50 -55°C VCE = -1.0 V VCE = -5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) µ VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 100 TJ = 125°C 75°C 10-1 10-2 REVERSE 25°C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut–Off Region http://onsemi.com 3 0.6 0.7 2N5401 1.0 0.9 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 2.5 TJ = -55°C to 135°C 2.0 1.5 1.0 0.5 θVC for VCE(sat) 0 -0.5 -1.0 -1.5 θVB for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k C, CAPACITANCE (pF) 10 µs INPUT PULSE 100 70 50 VCC -30 V 100 Vin RC Vout RB 5.1 k Vin 100 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 300 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25°C 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 1.0 2.0 3.0 5.0 10 20 30 50 300 IC/IB = 10 TJ = 25°C tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 10 0.2 0.3 0.5 100 Figure 5. Temperature Coefficients VBB +8.8 V 10.2 V 50 30 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time http://onsemi.com 4 50 100 200 2N5401 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N5401 Notes http://onsemi.com 6 2N5401 Notes http://onsemi.com 7 2N5401 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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