2N5400(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.130v) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -130 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -100 V, Emitter cut-off current IEBO VEB= -3 V, IC=0 hFE1 VCE= -5 V, IC=-1mA 30 hFE2 VCE= -5 V, IC= -10mA 40 hFE3 VCE= -5 V, 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance IE=0 IC=-50mA -0.1 μA -0.1 μA 180 VCE(sat) IC= -10mA, IB= -1mA -0.2 V VCE(sat) IC= -50mA, IB= -5mA -0.5 V VBE(sat) IC= -10mA, IB= -1mA -1 V VBE(sat) IC= -50mA, IB= -5mA -1 V fT Cob VCE=-10V, f =30MHz IC=-10mA VCB=-10V,IE=0,f=1MHz 100 MHz 6 pF 2N5400(PNP) TO-92 Bipolar Transistors Typical Characteristics