ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 OC) Symbol Value Unit Collector Base Voltage VCBO 55 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Emitter Current -IE 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2310 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group B hFE 100 - 200 - C hFE 160 - 320 - ICBO - - 0.5 μA IEBO - - 0.5 μA VCE(sat) - - 0.2 V fT - 230 - MHz VBE - 0.67 0.75 V Cob - 1.8 3.5 pF VCBO 55 - - V VCEO 50 - - V VEBO 5 - - V NF - 3 5 dB hie - 16.5 - kΩ hre - 70 - X10 hfe - 130 - - hoe - 11 - μS DC Current Gain at VCE=12V, IC=2mA Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=12V, IC=2mA Base Emitter Voltage at IC=2mA, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IC=10μA Noise Figure at VCE=6V, IC=0.1mA, f=120Hz, Rg=500Ω Small Signal Input Impedance at VCE=5V, IC=0.1mA,f=270Hz Small Signal Feedback Ratio at VCE=5V, IC=0.1mA,f=270Hz -6 Small Signal Current Transfer Ratio at VCE=5V, IC=0.1mA,f=270Hz Small Signal Output Admittance at VCE=5V, IC=0.1mA,f=270Hz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 Maximum Collector Dissipation Curve Typical Output Characteristics 100 50 0 100 150 50 8 40 6 30 4 20 10 A 2 I B =0 0 Ambient Temperature Ta(o C) 5 DC Current Transfer Ratio h FE Collector Current Ic (mA) VCE=12V 4 3 2 1 0.2 0 0.4 0.6 0.8 1.0 10 15 20 25 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 5 W m 200 60 00 Collector Current Ic (mA) 10 =2 300 Pc Collector Power Dissipation Pc (mW) ST 2SC2310 300 VCE=12V Ta=7 o 5 C 200 25 100 0 0.03 Base to Emitter Voltage V BE (V) 0.1 0.3 1.0 3 10 30 Collector Current Ic (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 Base to Emitter Voltage vs. Ambient Temperature Small Signal Current Transfer Ratio vs. Collector Current 300 Base to Emitter Voltage V BE (V) Small Signal Current Transfer Ratio h fe ST 2SC2310 f=270 Hz VCE=12V 200 100 0 0.03 0.1 0.3 1.0 3 10 I E =0 f=1MHz 4 3 2 1 0 4 8 12 16 20 Emitter Input Capacitance C ib (pF) Collector Output Capacitance Cob (pF) 5 VCE=12V I C=2mA 0.8 0.7 0.6 0.5 0.4 -20 0 20 40 60 80 Ambient Temperature Ta(o C) 30 Collector Current Ic (mA) Collector Output Capacitance vs. Collector to Base Voltage 0.9 Emitter Input Capacitance vs. Emitter to Base Voltage 5 I C=0 f=1MHz 4 3 2 1 0 Collector to Base Voltage VCB (V) 2 4 6 8 10 Emitter to Base Voltage V EB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002