ST 2SD1817Z NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current (Pulse) ICP 6 A Collector Dissipation Collector Dissipation @ TC = 25 OC PC 1 15 W Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 1 A at VCE = 2 V, IC = 2 A Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 25 mA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 4 mA Base Emitter Saturation Voltage at IC = 2 A, IB = 4 mA Symbol Min. Max. Unit hFE hFE 2000 1000 - - V(BR)CBO 80 - V V(BR)CEO 60 - V ICBO - 10 µA IEBO - 2.5 mA VCE(sat) - 1.5 V VBE(sat) - 2 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/08/2006 ST 2SD1817Z SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/08/2006 ST 2SD1817Z TO-251 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/08/2006