ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Power Dissipation Ptot 1.5 W Junction Temperature Tj 150 O Storage Temperature Range Ts -55 to +150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 1 mA Collector Cutoff Current at VCB = 600 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Symbol Min. Max. Unit hFE 10 70 - V(BR)CBO 600 - V V(BR)CEO 400 - V V(BR)EBO 9 - V ICBO - 100 nA IEBO - 100 µA VCE(sat) - 1 V VBE(sat) - 1.2 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/03/2006