SEMTECH_ELEC ST13003

ST 13003
NPN Silicon Epitaxial Planar Transistor
for power switching and electron rectifier
applications.
The transistor is subdivided into one group
according to its DC current gain.
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
600
V
Collector Emitter Voltage
VCEO
400
V
Emitter Base Voltage
VEBO
9
V
Collector Current
IC
1.5
A
Power Dissipation
Ptot
1.5
W
Junction Temperature
Tj
150
O
Storage Temperature Range
Ts
-55 to +150
O
C
C
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 100 mA
Collector Base Breakdown Voltage
at IC = 1 mA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 1 mA
Collector Cutoff Current
at VCB = 600 V
Emitter Cutoff Current
at VEB = 9 V
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 250 mA
Base Emitter Saturation Voltage
at IC = 1 A, IB = 250 mA
Symbol
Min.
Max.
Unit
hFE
10
70
-
V(BR)CBO
600
-
V
V(BR)CEO
400
-
V
V(BR)EBO
9
-
V
ICBO
-
100
nA
IEBO
-
100
µA
VCE(sat)
-
1
V
VBE(sat)
-
1.2
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
ST 13003
TO-220 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006