WT-Z210V-AU4 Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip (Dual pad/Vertical) Device NO:WT-Z210V-AU4 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side : Gold Pad.(Cathode) Back side : Gold Layer.(Anode) 3. Size: 3-1 Chip size: 10.0 mils x 10.0 mils (254 um x 254 um). 3-2 Chip thickness: 4.0 ± 1.0 mils (100 ± 25.4 um). 3-3 Dual Bonding pad: 7.7 mils x 7.7mils (195um x 195um). 3-4 Pattern drawing: Refer to the attached drawing. 4. Electrical Characteristics (Ta=25 C) Parameter Symbol Vz (Top) Zener Voltage Vz (Back) Forward Voltage Reverse Leakage Current Electrostatic Discharge Condition Iz=5mA Min. Typ. Max. 5.8 - 7.0 5.4 - 6.6 Unit V Vf IF=20mA 1.2 V IR VR=4V 100 nA ESD HBM MIL-STD 883 KV 8.0 5. Drawing: 6. Protection Circuit: Bonding pad Top side (Top View) LED N P-Sub Protection Zener N Back Side Bonding pad WEITRON TECHNOLOGY CO., LTD. Bonding pad TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 30 - Jun - 06