WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Gold Pad(Anode). Back side:Gold Layer(Cathode). 3. Size: 3-1. *Chip size : 6.88 mils x 6.88 mils (175µm x 17.5µm ). 3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15µm ). 3-3. Active area : 4.1 mils x 4.1 mils (105µm x 105µm). 3-4. Bonding pad : 4.5 mils x 4.5 mils (115µm x 115µm) . 3-5. Pattern drawing : Refer to the attached drawing. * Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing. 4. Electrical Characteristics (Ta=25ºC) Parameter Symbol Condition Min. Typ. Max. Unit Zener Voltage VZ IZ=5mA 12.5 - 15.5 V Forward Voltage Vf IF=20mA - - 1.2 V Reverse Leakage IR VR=10V - - 100 nA ESD HBM MIL-STD 883 8.0 - - KV Current Electrostatic Discharge 5. Drawing: Bonding pad Top side P N-sub Back side WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 20-Jul-07