WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode 2-2 Electrodes: Top side:Gold Pad(Anode). Back side:Gold Layer(Cathode). 3. Size: 3-1.*Chip size : 5.9 mils x 5.9 mils (150 µm x 150 µm ). 3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15 µm ). 3-3. Bonding pad : 3.54 mils x 3.54 mils (90 µm x 90 µm) . 3-4. Pattern drawing : Refer to the attached drawing. *Including scribing line. The chip size is(125±10)2µm2 after dicing. Parameter Symbol Condition Min. Typ. Max. Unit Zener Voltage Vz Iz=5mA 5.7 - 6.7 V - - 100 nA VR=5V - - 0.5 μA V VR=4V Reverse Leakage Current IR Forward Voltage Vf IF=20mA - - 1.2 Electrostatic Discharge ESD HBM MIL-STD883 8.0 - - 5. Drawing: Top View Bonding pad KV 6.Protection Circuit Top side P LED N-sub Protection Zener Back side WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 03 - Jul - 07