SFP730D SemiWell Semiconductor N-Channel MOSFET Features ◆ RDS(ON) Max 1.0 ohm at VGS = 10V ◆ Gate Charge ( Typical 18nC) ◆ Improve dv/dt capability, Fast switching ◆ 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have a high rugged avalanche characteristics. These device are well suited for high efficiency switch mode power supply active power factor correction. Electronic lamp based on half bridge topology Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol VDSS Parameter Ratings Units Drain-Source Voltage 400 V Drain Current TC=25℃ 6.5 TC=100℃ 2.9 ID VGSS A ± 30 V (Note 1) 24 A Gate-Source Voltage IDM Drain Current EAS Single Pulse Avalanche Energy (Note 2) 335 mJ EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TC=25℃ 76 W -45 ~ 150 ℃ Tj, TSTG pulse Operation and Storage Temperature range Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved SFP730D Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 1.65 ℃/W RθCS Thermal Resistance Case to Sink Typ. 0.5 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Ratings Symbol Items Unit Conditions Min BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown /ΔTJ coefficient IDSS Zero gate voltage Drain Current Voltage VGS = 0 V, ID = 250uA Typ. Max 400 V Temperature 0.6 ID =250uA, Reference to 25℃ V/℃ VDS = 400V, VGS = 0V 1 VDS = 320V, TS = 125℃ 10 uA IGSSF Gate body leakage current Forward VGS = 30V, VDS = 0V 100 nA IGSSR Gate body leakage current Reverse VGS = -30V, VDS = 0V -100 nA 4.0 V 1.0 Ω On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250uA RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 3.0A 2.0 0.75 Dynamic Characteristics Ciss Input Capacitance 520 pF 80 pF 15 pF VDS = 25 V, VGS = 0V Coss output Capacitance Crss Reverse Transfer Capacitance 2/5 f = 1.0MHz SFP730D Switching Characteristics Symbol td(on) Items Conditions Min Turn-on Delay Time Typ. Max Units 15 ns 65 ns 20 ns 40 ns VDD = 200V, ID = 6.0A tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time Qg Total Gate Charge VDS = 320V, ID = 6.0A 18 nC Qgs Gate-Source Charge VGS = 10V 2.5 nC Qgd Gate-Drain Charge 8.5 nC RG = 25 Ω (note 4,5) (note 4,5) Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source diode Forward Current 6.0 A ISM Maximum Pulse Drain-Source diode Forward Current 24.0 A VSD Drain-Source diode Forward voltage VGS = 0V, Is = 6.0A 1.4 V trr Reverse Recovery Time VGS = 0V, Is = 6.0A Qrr Reverse Recovery Charge dlF/dt =100 A/us (note 4) 230 nS 1.8 uC Notes 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 17mH, IAS = 6.0A, VDD = 50V, RG = 25 Ω, starting TJ = 25℃ 3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS , starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operation temperture 3/5 SFP730D Fig. 1 On-State Characteristics Fig. 2 On-Resistance variation vs Drain Current And gate Voltage Fig. 3 Breakdown Voltage Variation vs Temperature Fig. 5 Maximum Drain Current vs Case Temp. 4/5 Fig 4. On-Resistance Variation vs Temperature SFP730D TO-220 Package Dimension 5/5