SEMIWELL SFP730D

SFP730D
SemiWell Semiconductor
N-Channel MOSFET
Features
◆
RDS(ON) Max 1.0 ohm at VGS = 10V
◆
Gate Charge ( Typical 18nC)
◆
Improve dv/dt capability, Fast switching
◆
100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS
technology.
This
latest
technology
has
been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These device are well
suited for high efficiency switch mode power supply active
power factor correction. Electronic lamp based on half bridge
topology
Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified)
Symbol
VDSS
Parameter
Ratings
Units
Drain-Source Voltage
400
V
Drain Current
TC=25℃
6.5
TC=100℃
2.9
ID
VGSS
A
± 30
V
(Note 1)
24
A
Gate-Source Voltage
IDM
Drain Current
EAS
Single Pulse Avalanche Energy
(Note 2)
335
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
8.5
mJ
dv/dt
Peak diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation TC=25℃
76
W
-45 ~ 150
℃
Tj, TSTG
pulse
Operation and Storage Temperature range
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SFP730D
Thermal Characteristics
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance Junction to Case
1.65
℃/W
RθCS
Thermal Resistance Case to Sink Typ.
0.5
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Electrical Characteristics ( TC = 25℃ Unless otherwise noted)
Ratings
Symbol
Items
Unit
Conditions
Min
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
Breakdown
/ΔTJ
coefficient
IDSS
Zero gate voltage Drain Current
Voltage
VGS = 0 V, ID = 250uA
Typ.
Max
400
V
Temperature
0.6
ID =250uA, Reference to 25℃
V/℃
VDS = 400V, VGS = 0V
1
VDS = 320V, TS = 125℃
10
uA
IGSSF
Gate body leakage current Forward
VGS = 30V, VDS = 0V
100
nA
IGSSR
Gate body leakage current Reverse
VGS = -30V, VDS = 0V
-100
nA
4.0
V
1.0
Ω
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10V, ID = 3.0A
2.0
0.75
Dynamic Characteristics
Ciss
Input Capacitance
520
pF
80
pF
15
pF
VDS = 25 V, VGS = 0V
Coss
output Capacitance
Crss
Reverse Transfer Capacitance
2/5
f = 1.0MHz
SFP730D
Switching Characteristics
Symbol
td(on)
Items
Conditions
Min
Turn-on Delay Time
Typ.
Max
Units
15
ns
65
ns
20
ns
40
ns
VDD = 200V, ID = 6.0A
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
Qg
Total Gate Charge
VDS = 320V, ID = 6.0A
18
nC
Qgs
Gate-Source Charge
VGS = 10V
2.5
nC
Qgd
Gate-Drain Charge
8.5
nC
RG = 25 Ω
(note 4,5)
(note 4,5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source diode Forward Current
6.0
A
ISM
Maximum Pulse Drain-Source diode Forward Current
24.0
A
VSD
Drain-Source diode Forward voltage
VGS = 0V, Is = 6.0A
1.4
V
trr
Reverse Recovery Time
VGS = 0V, Is = 6.0A
Qrr
Reverse Recovery Charge
dlF/dt =100 A/us
(note 4)
230
nS
1.8
uC
Notes
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17mH, IAS = 6.0A, VDD = 50V, RG = 25 Ω, starting TJ = 25℃
3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS , starting TJ = 25℃
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operation temperture
3/5
SFP730D
Fig. 1 On-State Characteristics
Fig. 2 On-Resistance variation vs Drain Current
And gate Voltage
Fig. 3 Breakdown Voltage Variation vs
Temperature
Fig. 5 Maximum Drain Current vs Case Temp.
4/5
Fig 4. On-Resistance Variation vs Temperature
SFP730D
TO-220 Package Dimension
5/5