SG45N12T Discrete IGBTs Dimensions TO-247AD E C G C(TAB) G=Gate, C=Collector, E=Emitter,TAB=Collector SG45N12T Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM TC=25oC; limited by leads TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=5 (RBSOA) Clamped inductive load PC TC=25oC SSOA Millimeter Min. Max. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Maximum Tab temperature for soldering SMD devices for 10s Mounting torque (M3) Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit 1200 1200 V ±20 ±30 V 75 45 180 ICM=90 @ 0.8 VCES A 300 W A -55...+150 150 -55...+150 TJ TJM Tstg Md Dim. o 300 o 260 o C C C 1.13/10 Nm/Ib.in. 6 g Weight (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=1mA; VGE=0V VGE(th) IC=750uA; VCE=VGE ICES VCE=VCES; VGE=0V; 2.5 TJ=25 C o TJ=125 C VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V max. 1200 o IGES typ. Unit V 5.0 V 250 uA 2 mA ±100 nA 2.5 V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Test Conditions IC=IC90; VCE=10V Pulse test, t IC(ON) 300us, duty cycle min. typ. 33 44 S VGE=10V; VCE=10V 220 A VCE=25V; VGE=0V; f=1MHz 255 89 Qg 170 IC=IC90; VGE=15V; VCE=0.5VCES Qgc td(on) max. 4700 Cres Qge Unit 2% Cies Coes Characteristic Values pF 28 nC 57 o Inductive load, TJ=25 C 55 ns IC=IC90; VGE=15V; 28 ns 370 800 ns 390 700 ns Eoff VCE=0.8VCES'; RG=Roff=5 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 14 25 mJ td(on) Inductive load, TJ=125oC 64 ns IC=IC90; VGE=15V; 32 ns Eon VCE=0.8VCES'; RG=Roff=5 3.0 mJ td(off) Remarks:Switching times may increase 660 ns for VCE(Clamp) 740 ns 25 mJ tri td(off) tfi tri tfi Eoff increased RG 0.8VCES' higher TJ or RthJC RthCK 0.42 0.25 K/W K/W