SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD E C G C(TAB) SG25S12T G=Gate, C=Collector, E=Emitter,TAB=Collector SG25S12DT Symbol Test Conditions o o Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; 1200 1200 V VGES VGEM Continuous Transient ±20 ±30 V TC=25oC TC=90oC 46 25 A ICM=48 @ 0.8 VCES A 313 W IC25 IC90 VGE=15V; TVJ=125oC; RG=25 (RBSOA) Clamped inductive load, L=100uH PC TC=25oC SSOA -55...+150 150 -55...+150 TJ TJM Tstg Mounting torque (M3) Test Conditions IC=1500uA; VGE=0V VGE(th) IC=1000uA; VCE=VGE ICES Nm/Ib.in. 6 g V CE(sat) typ. max. 1200 V 350 uA 1.4 mA VCE=0V; VGE=±20V ±100 nA IC=IC90; VGE=15V 2.35 V VCE=1200V; 3.0 V 5.0 VGE=0V; IGES C (TJ=25oC, unless otherwise specified) Characteristic Values Unit min. BVCES C 1.13/10 Weight Symbol o 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md o o TJ=25 C o TJ=150 C 4.0 SG25S12T, SG25S12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=25A; VCE=20V Pulse test, t typ. max. 20 300us, duty cycle Unit S 2% 2150 2600 160 190 Cres 110 130 Qg 225 300 - - - - Inductive load, TJ=25 C 45 60 ns IC=25A; VGE=15V/0V; L=180uH 40 52 ns VCC=800V; RG=Roff=22 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 730 950 ns 30 39 ns 1.5 2.0 mJ Inductive load, TJ=150 C 50 60 ns IC=25A; VGE=15V/0V; L=180uH 36 43 ns Eon VCC=800V; RG=Roff=22 3.8 4.6 mJ td(off) Remarks:Switching times may increase 820 990 ns for VCE(Clamp) 42 50 ns 2.9 3.8 mJ 0.4 K/W 40 K/W Cies Coes Qge VCE=25V; VGE=0V; f=1MHz IC=25A; VGE=15V; VCC=960V Qgc td(on) tri td(off) tfi Eoff td(on) tri tfi Eoff RthJC o o 0.8VCES' higher TJ or increased RG IGBT RthCK Symbol Test Conditions Characteristic Values min. typ. o IF=30A; TVJ=150 C TVJ=25 C trr RthJC Unit max. 2.2 o IRM nC (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) VF pF V 2.55 VR=540V; IF=30A; -diF/dt=240A/us L 0.05uH; TVJ=100oC 16 18 A IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 40 60 ns 0.9 K/W