SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; 600 600 V VGES VGEM Continuous Transient ±20 ±30 V IC25 IC90 ICM TC=25oC TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=33 (RBSOA) Clamped inductive load, L=300uH PC TC=25oC SSOA A 100 W A -55...+150 150 -55...+150 TJ TJM Tstg o o 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md 24 12 48 ICM=24 @ 0.8 VCES Mounting torque with screw M3 Mounting torque with screw M3.5 C C 0.45/4 0.55/5 Nm/Ib.in. 4 g Weight (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=250uA; VGE=0V VGE(th) IC=250uA; VCE=VGE ICES VCE=0.8VCES; VGE=0V; typ. max. 600 2.5 Unit V 5.0 V TJ=25 C 200 uA o 1.5 mA ±100 nA 2.1 V o TJ=125 C IGES VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Test Conditions IC=IC90; VCE=10V Pulse test, t 300us, duty cycle Characteristic Values min. typ. 5 11 VCE=25V; VGE=0V; f=1MHz 100 15 Qg 32 IC=IC90; VGE=15V; VCE=0.5VCES tri td(off) tfi Eoff td(on) tri pF 10 Qgc td(on) S 860 Cres Qge max. 2% Cies Coes Unit nC 10 o Inductive load, TJ=25 C 20 ns IC=IC90; VGE=15V; L=300uH 20 ns VCE=0.8VCES; RG=Roff=18 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG 150 250 ns 120 270 ns 0.5 0.8 mJ o Inductive load, TJ=25 C 20 ns IC=IC90; VGE=15V; L=300uH 20 ns Eon VCE=0.8VCES; RG=Roff=18 0.15 mJ td(off) Remarks:Switching times may increase 200 ns for VCE(Clamp) 200 ns 0.8 mJ tfi Eoff RthJC 0.8VCES' higher TJ or increased RG IGBT 1.25 RthCK 0.25 Symbol Test Conditions Characteristic Values min. o IF=15A; TVJ=150 C typ. TVJ=25 C trr RthJC V 2.5 VR=100V; IF=25A; -diF/dt=100A/us L 0.05uH; TVJ=100oC 2 IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC 35 Diode Unit max. 1.3 o IRM K/W (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) VF K/W 2.5 A ns 1.6 K/W