SIRECT SG12N06DP

SG12N06P, SG12N06DP
Discrete IGBTs
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
E
C
G
G=Gate, C=Collector, E=Emitter
SG12N06P
SG12N06DP
Symbol
Test Conditions
o
o
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Maximum Ratings
Unit
VCES
VCGR
TJ=25 C to 150 C
TJ=25oC to 150oC; RGE=1 M ;
600
600
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC90
ICM
TC=25oC
TC=90oC
TC=25oC, 1 ms
VGE=15V; TVJ=125oC; RG=33
(RBSOA) Clamped inductive load, L=300uH
PC
TC=25oC
SSOA
A
100
W
A
-55...+150
150
-55...+150
TJ
TJM
Tstg
o
o
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md
24
12
48
ICM=24
@ 0.8 VCES
Mounting torque with screw M3
Mounting torque with screw M3.5
C
C
0.45/4
0.55/5
Nm/Ib.in.
4
g
Weight
(TJ=25oC, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
BVCES
IC=250uA; VGE=0V
VGE(th)
IC=250uA; VCE=VGE
ICES
VCE=0.8VCES;
VGE=0V;
typ.
max.
600
2.5
Unit
V
5.0
V
TJ=25 C
200
uA
o
1.5
mA
±100
nA
2.1
V
o
TJ=125 C
IGES
VCE=0V; VGE=±20V
VCE(sat)
IC=IC90; VGE=15V
SG12N06P, SG12N06DP
Discrete IGBTs
(TJ=25oC, unless otherwise specified)
Symbol
gts
Test Conditions
IC=IC90; VCE=10V
Pulse test, t
300us, duty cycle
Characteristic Values
min.
typ.
5
11
VCE=25V; VGE=0V; f=1MHz
100
15
Qg
32
IC=IC90; VGE=15V; VCE=0.5VCES
tri
td(off)
tfi
Eoff
td(on)
tri
pF
10
Qgc
td(on)
S
860
Cres
Qge
max.
2%
Cies
Coes
Unit
nC
10
o
Inductive load, TJ=25 C
20
ns
IC=IC90; VGE=15V; L=300uH
20
ns
VCE=0.8VCES; RG=Roff=18
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
150
250
ns
120
270
ns
0.5
0.8
mJ
o
Inductive load, TJ=25 C
20
ns
IC=IC90; VGE=15V; L=300uH
20
ns
Eon
VCE=0.8VCES; RG=Roff=18
0.15
mJ
td(off)
Remarks:Switching times may increase
200
ns
for VCE(Clamp)
200
ns
0.8
mJ
tfi
Eoff
RthJC
0.8VCES' higher TJ or
increased RG
IGBT
1.25
RthCK
0.25
Symbol
Test Conditions
Characteristic Values
min.
o
IF=15A; TVJ=150 C
typ.
TVJ=25 C
trr
RthJC
V
2.5
VR=100V; IF=25A; -diF/dt=100A/us
L 0.05uH; TVJ=100oC
2
IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC
35
Diode
Unit
max.
1.3
o
IRM
K/W
(TJ=25oC, unless otherwise specified)
Reverse Diode (FRED)
VF
K/W
2.5
A
ns
1.6
K/W