SIRECT SG20N12DT

SG20N12T, SG20N12DT
Discrete IGBTs
Dimensions TO-247AD
E
C
G
C(TAB)
SG20N12T
G=Gate, C=Collector,
E=Emitter,TAB=Collector
SG20N12DT
Symbol
Test Conditions
o
o
VCES
VCGR
TJ=25 C to 150 C
TJ=25oC to 150oC; RGE=1 M ;
VGES
VGEM
Continuous
Transient
IC25
IC90
ICM
TC=25oC
TC=90oC
TC=25oC, 1 ms
VGE=15V; TVJ=125oC; RG=47
(RBSOA) Clamped inductive load
PC
TC=25oC
SSOA
Dim.
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Maximum Ratings
Unit
1200
1200
V
±20
±30
V
40
20
80
ICM=40
@ 0.8 VCES
A
150
W
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Maximum Tab temperature for soldering SMD devices for 10s
Mounting torque (M3)
Inches
Min.
Max.
A
B
A
-55...+150
150
-55...+150
TJ
TJM
Tstg
Md
Millimeter
Min. Max.
o
300
o
260
o
C
C
C
1.13/10
Nm/Ib.in.
6
g
Weight
(TJ=25oC, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
BVCES
IC=1mA; VGE=0V
VGE(th)
IC=250uA; VCE=VGE
ICES
VCE=VCES;
VGE=0V;
typ.
V
2.5
TJ=25 C
o
TJ=125 C
VCE=0V; VGE=±20V
VCE(sat)
IC=IC90; VGE=15V
max.
1200
o
IGES
Unit
2.0
5.0
V
250
uA
1
mA
±100
nA
2.5
V
SG20N12T, SG20N12DT
Discrete IGBTs
(TJ=25oC, unless otherwise specified)
Symbol
gts
Test Conditions
IC=IC90; VCE=10V
Pulse test, t
300us, duty cycle
Characteristic Values
min.
typ.
12
16
VCE=25V; VGE=0V; f=1MHz
90
31
Qg
63
IC=IC90; VGE=15V; VCE=0.5VCES
tri
td(off)
tfi
Eoff
td(on)
tri
pF
13
Qgc
td(on)
S
1750
Cres
Qge
max.
2%
Cies
Coes
Unit
nC
26
o
Inductive load, TJ=25 C
28
ns
IC=IC90; VGE=15V; L=100uH;
20
ns
VCE=0.8VCES'; RG=Roff=47
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
400
800
ns
380
700
ns
6.5
10.5
mJ
o
Inductive load, TJ=125 C
30
ns
IC=IC90; VGE=15V; L=100uH;
27
ns
Eon
VCE=0.8VCES'; RG=Roff=47
0.90
mJ
td(off)
Remarks:Switching times may increase
700
ns
for VCE(Clamp)
550
ns
9.5
mJ
tfi
Eoff
0.8VCES' higher TJ or
increased RG
RthJC
0.83
RthCK
0.25
Test Conditions
Characteristic Values
min.
VF
IRM
trr
RthJC
K/W
(TJ=25oC, unless otherwise specified)
Reverse Diode (FRED)
Symbol
K/W
typ.
max.
o
1.87
TVJ=25oC
2.15
IF=12A; TVJ=150 C
VR=540V; IF=20A; -diF/dt=100A/us
L 0.05uH; TVJ=100oC
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
7
40
Unit
V
A
60
ns
1.6
K/W