SIRENZA NGA-286

Preliminary
NGA-286
Product Description
Sirenza Microdevices’ NGA-286 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a
Darlington configuration is utilized for broadband performance up
to 6 Ghz. The heterojunction increases breakdown voltage and
minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of
intermodulation products.
25
20
15
dB
10
5
0
1
2
3
4
5
Frequency GHz
Sy mbol
6
7
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• High Gain: 14.8dB at 1950Mhz
• Cascadable 50 ohm: 1.3:1 VSWR
• Operates from Single Supply
• Low Thermal Resistance Package
• Unconditionally Stable
Small Signal Gain vs. Frequency
0
DC-6000 MHz, Cascadable GaAs
HBT MMIC Amplifier
8
Parameter
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
Frequency
Min.
Ty p.
15.2
15.2
15.5
P1dB
Output Pow er at 1dB Compression
dBm
850 M Hz
1950 M Hz
2400 M Hz
OIP3
Output Third Order Intercept Point
dBm
850 M Hz
1950 M Hz
2400 M Hz
32.0
31.4
30.9
dB
850 M Hz
1950 M Hz
2400 M Hz
15.6
14.8
14.4
G
Small Signal Gain
Bandw idth Determined by Return Loss (>10dB)
Input VSWR
Output VSWR
M Hz
DC - 5000 M Hz
1.3:1
-
DC - 5000 M Hz
1.3:1
Noise Figure
dB
VD
Device Operating Voltage
V
ID
Device Operating Current
mA
RTH, j-l
Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 75 Ohms
ID = 50 mA Typ.
TL = 25ºC
3800
-
NF
Max.
°C/W
2000 M Hz
3.4
4.0
45
50
55
120
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101102 Rev OBS
Preliminary
OBSOLETE
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Key parameters, at typical operating frequencies:
Test Condition
Ty pical
25ºC
Parameter
(ID = 50mA, unless otherwise noted)
Unit
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
15.8
31.8
15.3
21.0
18.8
dB
dBm
dBm
dB
dB
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
15.6
32.0
15.2
20.0
18.8
dB
dBm
dBm
dB
dB
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
14.8
31.4
15.2
17.1
18.7
dB
dBm
dBm
dB
dB
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
14.4
30.9
15.5
16.0
18.6
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
110 mA
Max. Device Voltage (VD)
6V
Max. RF Input Pow er
+10 dBm
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101102 Rev OBS
Preliminary
OBSOLETE
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
S21, ID =50mA, T=25ºC
S12, ID =50mA, T=25ºC
25
0
20
-5
-10
15
dB
dB -15
10
-20
5
-25
0
-30
0
1
2
3
4
5
6
7
0
8
1
2
Frequency GHz
0
-5
-5
-10
-10
-15
dB -15
-20
-20
-25
-25
-30
-30
1
2
3
4
5
6
7
8
0
6
7
8
1
2
3
4
5
6
7
8
Frequency GHz
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94085
5
S22, ID =50mA, T=25ºC
0
0
4
Frequency GHz
S11, ID =50mA, T=25ºC
dB
3
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101102 Rev OBS
Preliminary
OBSOLETE
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Basic Application Circuit
Application Circuit Element Values
R BIAS
VS
1 uF
1000
pF
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
LC
1
RF in
4
NGA-286
3
RF out
CB
2
CB
Frequency (Mhz)
Reference
Designator
R ecommended B ias R esistor Values for ID=50mA
R BIAS=( VS-VD ) / ID
Supply Voltage(VS)
RBIAS
VS
N2
CB
1000 pF
LC
39
8V
82
10 V
120
12 V
160
Note: RBIAS provi des D C bi as stabi li ty over temperature.
1 uF
RBIAS
6V
Mounting Instructions
CD
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “N2” designator on
the top surface of the package.
3
4
N2
Pin #
Function
1
RF IN
RF i nput pi n. Thi s pi n requi res the use
of an external D C blocki ng capaci tor
chosen for the frequency of operati on.
2, 4
GND
C onnecti on to ground. Use vi a holes
for best performance to reduce lead
i nductance as close to ground leads as
possi ble.
2
3
RF OUT/ RF output and bi as pi n. D C voltage i s
BIAS
present on thi s pi n, therefore a D C
blocki ng capaci tor i s necessary for
proper operati on.
1
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085
D escription
Part N umber
R eel Siz e
D ev ices/R eel
NGA-286
7"
1000
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101102 Rev OBS
Preliminary
OBSOLETE
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters]
Refer to drawing posted at www.sirenza.com for tolerances.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101102 Rev OBS